2SC1970 Datasheet. Specs and Replacement
Type Designator: 2SC1970 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 175 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO220
2SC1970 Substitution
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2SC1970 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1970 DESCRIPTION High Power Gain- G 9.2dB,f= 175MHz, P = 1W; V = 13.5V pe O CC High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATING... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1975 DESCRIPTION Collector-Base Breakdown Voltage V =160V(Min) (BR)CBO Withstands worst overload conditions. 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design for used in transceiver power output applications ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
Detailed specifications: 2SC1965, 2SC1965A, 2SC1966, 2SC1967, 2SC1968, 2SC1968A, 2SC1969, 2SC197, 2N3906, 2SC1971, 2SC1972, 2SC1973, 2SC1974, 2SC1975, 2SC1976, 2SC1977, 2SC1978
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