2SC1977 Datasheet. Specs and Replacement
Type Designator: 2SC1977 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 300 MHz
Collector Capacitance (Cc): 10 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO126
2SC1977 Substitution
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2SC1977 datasheet
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1975 DESCRIPTION Collector-Base Breakdown Voltage V =160V(Min) (BR)CBO Withstands worst overload conditions. 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design for used in transceiver power output applications ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION High Power Gain- G 7dB, P = 6W; V = 13.5V pe O CE High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
Detailed specifications: 2SC197, 2SC1970, 2SC1971, 2SC1972, 2SC1973, 2SC1974, 2SC1975, 2SC1976, 2SC2073, 2SC1978, 2SC198, 2SC1980, 2SC1981, 2SC1981S, 2SC1982, 2SC1982S, 2SC1983
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