2SC1980 Datasheet. Specs and Replacement
Type Designator: 2SC1980 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 120 V
Maximum Collector-Emitter Voltage |Vce|: 120 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 260
Package: TO92
2SC1980 Substitution
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2SC1980 datasheet
Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitt... See More ⇒
Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitt... See More ⇒
Detailed specifications: 2SC1972, 2SC1973, 2SC1974, 2SC1975, 2SC1976, 2SC1977, 2SC1978, 2SC198, A733, 2SC1981, 2SC1981S, 2SC1982, 2SC1982S, 2SC1983, 2SC1984, 2SC1984A, 2SC1985
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