2SC1984A PDF and Equivalents Search

 

2SC1984A Specs and Replacement

Type Designator: 2SC1984A

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 30 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 500

Noise Figure, dB: -

Package: TO220

 2SC1984A Substitution

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2SC1984A datasheet

 8.1. Size:37K  panasonic

2sc1980.pdf pdf_icon

2SC1984A

Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitt... See More ⇒

 8.2. Size:41K  panasonic

2sc1980 e.pdf pdf_icon

2SC1984A

Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitt... See More ⇒

 8.3. Size:64K  wingshing

2sc1983.pdf pdf_icon

2SC1984A

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 8.4. Size:83K  sanken-ele

2sc1985 2sc1986.pdf pdf_icon

2SC1984A

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Detailed specifications: 2SC198 , 2SC1980 , 2SC1981 , 2SC1981S , 2SC1982 , 2SC1982S , 2SC1983 , 2SC1984 , B772 , 2SC1985 , 2SC1986 , 2SC1987 , 2SC1988 , 2SC1989 , 2SC198A , 2SC199 , 2SC1990 .

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