2SC1988 Datasheet. Specs and Replacement
Type Designator: 2SC1988 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.35 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Collector-Emitter Voltage |Vce|: 12 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.07 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4500 MHz
Collector Capacitance (Cc): 0.6 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO72
2SC1988 Substitution
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2SC1988 datasheet
Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitt... See More ⇒
Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitt... See More ⇒
Detailed specifications: 2SC1982, 2SC1982S, 2SC1983, 2SC1984, 2SC1984A, 2SC1985, 2SC1986, 2SC1987, BD135, 2SC1989, 2SC198A, 2SC199, 2SC1990, 2SC1991, 2SC1992, 2SC1993, 2SC1994
Keywords - 2SC1988 pdf specs
2SC1988 cross reference
2SC1988 equivalent finder
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