2SC1989 Specs and Replacement
Type Designator: 2SC1989
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 0.03 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 1.2 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: TO92
2SC1989 Substitution
- BJT ⓘ Cross-Reference Search
2SC1989 datasheet
Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitt... See More ⇒
Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitt... See More ⇒
Detailed specifications: 2SC1982S, 2SC1983, 2SC1984, 2SC1984A, 2SC1985, 2SC1986, 2SC1987, 2SC1988, 8050, 2SC198A, 2SC199, 2SC1990, 2SC1991, 2SC1992, 2SC1993, 2SC1994, 2SC1995
Keywords - 2SC1989 pdf specs
2SC1989 cross reference
2SC1989 equivalent finder
2SC1989 pdf lookup
2SC1989 substitution
2SC1989 replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y
Popular searches
2sa1837 | ksc1845 transistor | irf630 datasheet | mpsa13 equivalent | c5198 | 2sc1969 transistor | bcy21 | s8550 datasheet