2SC1989 Datasheet, Equivalent, Cross Reference Search

   Type Designator: 2SC1989
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 150 MHz
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92

2SC1989 Transistor Equivalent Substitute - Cross-Reference Search

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