2SC1993 Specs and Replacement
Type Designator: 2SC1993
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 290
Package: TO92
2SC1993 Substitution
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2SC1993 datasheet
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Transistor 2SC1980 Silicon NPN epitaxial planer type For high breakdown voltage low-noise amplification Unit mm Complementary to 2SA921 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Low noise voltage NV. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to emitt... See More ⇒
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2SC1959 0.5 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Excellent hFE Linearity High Transition Frequency Millimeter REF. Min. Max. A 4.40 4.70 B 4.30 4.70 C 12.70 - CLASSIFICATION OF hFE D 3.30 3.81 E 0.36 0.56 Product-Rank 2SC1959-O 2SC1959-... See More ⇒
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JMnic Product Specification Silicon NPN Power Transistors 2SC1942 DESCRIPTION With TO-3 package High breakdown voltage High speed switching APPLICATIONS For TV horizontal output applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS ... See More ⇒
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Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-220) and sy... See More ⇒
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2SC1959(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. COLLECTOR 3. BASE Features Excellent hFE linearlity MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current Continuous 0.5 A PC Collector Power Dissipation 500 mW... See More ⇒
2SC1959M(BR3DG1959M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features h , 2SA562M(BR3CG562M) FE Excellent hFE Linearity, complementary pair with 2SA562M(BR3CG562M). / Applications , ... See More ⇒
DIP Type Transistors NPN Transistors 2SC1923 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Collector Current Capability IC=20mA Collector Emitter Voltage VCEO=30V 0.60 Max General Purpose Switching Application 0.45 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base V... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1986 DESCRIPTION Silicon NPN tripe diffused mesa Collector-Emitter Breakdown Voltage- V = 80(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General and industrial purpose ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1985 DESCRIPTION Silicon NPN tripe diffused mesa Collector-Emitter Breakdown Voltage- V = 60(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General and industrial purpose ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1975 DESCRIPTION Collector-Base Breakdown Voltage V =160V(Min) (BR)CBO Withstands worst overload conditions. 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design for used in transceiver power output applications ABSOLUTE MAXIMUM RATINGS(T =25... See More ⇒
isc Silicon NPN Power Transistor 2SC1942 DESCRIPTION High Voltage-V = 1500V(Min.) CEX Collector Current- I = 3.0A C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in large screen color deflection circuits . ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage 1500 V CE... See More ⇒
isc Silicon NPN Power Transistor 2SC1971 DESCRIPTION High Power Gain- G 7dB, P = 6W; V = 13.5V pe O CE High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Bas... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC1907 DESCRIPTION Low Noise High Gain Bandwidth Product 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for VHF TV tuner and local oscillator applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vo... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1922 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO ... See More ⇒
isc Silicon NPN Power Transistor 2SC1953 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA914 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power pre-amplification,which is optimum for the pre-driver stage of a 60 W to 100 W... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1929 DESCRIPTION Si NPN planar Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF output for direct main operation TV ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1913 2SC1913A DESCRIPTION With TO-220 package Complement to type 2SA913/913A Large collector power dissipation High VCEO APPLICATIONS Audio frequency high power driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symb... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1904 DESCRIPTION Low collector to emitter saturation voltage Output of 1W can be obtained by a complementary with 2SA899 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Power Transistor 2SC1969 DESCRIPTION With TO-220 packaging Reliable performance at higher powers Accurate reproduction of Input signal Greater dynamic range Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplif... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC1906 DESCRIPTION Low Noise High Gain Bandwidth Product 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in VHF amplifier,mixer and local oscillator. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1970 DESCRIPTION High Power Gain- G 9.2dB,f= 175MHz, P = 1W; V = 13.5V pe O CC High Reliability 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATING... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1913 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency high power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1905 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
Detailed specifications: 2SC1987, 2SC1988, 2SC1989, 2SC198A, 2SC199, 2SC1990, 2SC1991, 2SC1992, 2SC2625, 2SC1994, 2SC1995, 2SC1996, 2SC1997, 2SC1998, 2SC1999, 2SC20, 2SC200
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