2SC2003 Datasheet and Replacement
Type Designator: 2SC2003
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.3
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 70
MHz
Collector Capacitance (Cc): 7
pF
Forward Current Transfer Ratio (hFE), MIN: 90
Noise Figure, dB: -
Package:
TO92
-
BJT ⓘ Cross-Reference Search
2SC2003 Datasheet (PDF)
8.4. Size:212K mcc
2sc2001-m.pdf 

MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55
8.5. Size:212K mcc
2sc2001-l.pdf 

MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55
8.6. Size:212K mcc
2sc2001-k.pdf 

MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55
8.8. Size:473K secos
2sc2001.pdf 

2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High hFE and low VCE(sat) G HhFE(IC=100mA)200(Typ) VCE(sat)(700mA)0.2V(Typ) EmitterJCollectorBase A DCLASSIFICATION OF hFE Millimeter BREF.Product-Rank 2SC2001-M 2S
8.9. Size:797K jiangsu
2sc2001.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR (NPN) TO-92 FEATURES High hFE and Low VCE(sat) hFE(IC=100mA) : 200(Typ) 1. EMITTER VCE(sat)(700mA): 0.2V (Typ) 2. COLLECTOR 3. BASE Equivalent Circuit C2001=Device code Solid dot=Green molding compound device, XXX if none,the normal dev
8.10. Size:226K lge
2sc2001.pdf 

2SC2001(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base V
Datasheet: 2N3192
, 2N3193
, 2N3194
, 2N3195
, 2N3196
, 2N3197
, 2N3198
, 2N3199
, 2SC4793
, 2N320
, 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
.
History: 2SC2038
| MMBTSC1623G
| MD8003
Keywords - 2SC2003 transistor datasheet
2SC2003 cross reference
2SC2003 equivalent finder
2SC2003 lookup
2SC2003 substitution
2SC2003 replacement