2SC2003 Datasheet and Replacement

   Type Designator: 2SC2003
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 70 MHz
   Collector Capacitance (Cc): 7 pF
   Forward Current Transfer Ratio (hFE), MIN: 90
   Noise Figure, dB: -
   Package: TO92

2SC2003 Substitution

- BJT ⓘ Cross-Reference Search

2SC2003 Datasheet (PDF)

..1. Size:159K nec
2sc2003.pdf pdf_icon

8.1. Size:45K nec
2sc2000.pdf pdf_icon

8.2. Size:154K nec
2sc2001.pdf pdf_icon

8.3. Size:154K nec
2sc2002.pdf pdf_icon

8.4. Size:212K mcc
2sc2001-m.pdf pdf_icon

MCC2SC2001-MMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components2SC2001-LCA 91311Phone: (818) 701-49332SC2001-KFax: (818) 701-4939Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7APlastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range: -55

8.5. Size:212K mcc
2sc2001-l.pdf pdf_icon

8.6. Size:212K mcc
2sc2001-k.pdf pdf_icon

8.7. Size:1147K no
2sc2001.pdf pdf_icon

8.8. Size:473K secos
2sc2001.pdf pdf_icon

2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High hFE and low VCE(sat) G HhFE(IC=100mA)200(Typ) VCE(sat)(700mA)0.2V(Typ) EmitterJCollectorBase A DCLASSIFICATION OF hFE Millimeter BREF.Product-Rank 2SC2001-M 2S

8.9. Size:797K jiangsu
2sc2001.pdf pdf_icon

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR (NPN) TO-92 FEATURES High hFE and Low VCE(sat) hFE(IC=100mA) : 200(Typ) 1. EMITTER VCE(sat)(700mA): 0.2V (Typ) 2. COLLECTOR 3. BASE Equivalent Circuit C2001=Device code Solid dot=Green molding compound device, XXX if none,the normal dev

8.10. Size:226K lge
2sc2001.pdf pdf_icon

2SC2001(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) : 200(Typ) VCE(sat)(700mA): 0.2V (Typ) Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base V

Datasheet: 2SC1997 , 2SC1998 , 2SC1999 , 2SC20 , 2SC200 , 2SC2000 , 2SC2001 , 2SC2002 , S9013 , 2SC2008 , 2SC2009 , 2SC201 , 2SC2010 , 2SC2011 , 2SC2012 , 2SC2013 , 2SC2014 .