2SC2008 Specs and Replacement
Type Designator: 2SC2008
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 35 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 280 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO92
- BJT ⓘ Cross-Reference Search
2SC2008 datasheet
8.5. Size:212K mcc
2sc2001-m.pdf 
MCC 2SC2001-M Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2001-L CA 91311 Phone (818) 701-4933 2SC2001-K Fax (818) 701-4939 Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7A Plastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range -55... See More ⇒
8.6. Size:212K mcc
2sc2001-l.pdf
MCC 2SC2001-M Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2001-L CA 91311 Phone (818) 701-4933 2SC2001-K Fax (818) 701-4939 Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7A Plastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range -55... See More ⇒
8.7. Size:212K mcc
2sc2001-k.pdf
MCC 2SC2001-M Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC2001-L CA 91311 Phone (818) 701-4933 2SC2001-K Fax (818) 701-4939 Features Capable of 0.6Watts of Power Dissipation. NPN Silicon Collector-current 0. 7A Plastic-Encapsulate Collector-base Voltage 30V Operating and storage junction temperature range -55... See More ⇒
8.9. Size:473K secos
2sc2001.pdf
2SC2001 0.7 A , 30 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High hFE and low VCE(sat) G H hFE(IC=100mA) 200(Typ) VCE(sat)(700mA) 0.2V(Typ) Emitter J Collector Base A D CLASSIFICATION OF hFE Millimeter B REF. Product-Rank 2SC2001-M 2S... See More ⇒
8.10. Size:797K jiangsu
2sc2001.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2001 TRANSISTOR (NPN) TO-92 FEATURES High hFE and Low VCE(sat) hFE(IC=100mA) 200(Typ) 1. EMITTER VCE(sat)(700mA) 0.2V (Typ) 2. COLLECTOR 3. BASE Equivalent Circuit C2001=Device code Solid dot=Green molding compound device, XXX if none,the normal dev... See More ⇒
8.11. Size:226K lge
2sc2001.pdf
2SC2001(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High hFE and low VCE(sat) hFE(IC=100mA) 200(Typ) VCE(sat)(700mA) 0.2V (Typ) Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base V... See More ⇒
Detailed specifications: 2SC1998
, 2SC1999
, 2SC20
, 2SC200
, 2SC2000
, 2SC2001
, 2SC2002
, 2SC2003
, D209L
, 2SC2009
, 2SC201
, 2SC2010
, 2SC2011
, 2SC2012
, 2SC2013
, 2SC2014
, 2SC2017
.
History: KTB988
| KTC1170
| 2SC2240
| KTC1006
Keywords - 2SC2008 pdf specs
2SC2008 cross reference
2SC2008 equivalent finder
2SC2008 pdf lookup
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