2SC2022 Specs and Replacement
Type Designator: 2SC2022
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Collector Capacitance (Cc): 18 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
2SC2022 datasheet
..1. Size:184K inchange semiconductor
2sc2022.pdf 
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2022 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
8.7. Size:23K sanken-ele
2sc2023.pdf
2SC2023 Silicon NPN Triple Diffused Planar Transistor Application Series Regulator, Switch, and General Purpose Electrical Characteristics External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25 C) (Ta=25 C) Symbol 2SC2023 Symbol Conditions 2SC2023 Unit Unit 0.2 4.8 0.2 10.2 0.1 2.0 VCBO 300 ICBO VCB=300V 1.0max V mA VCEO 300 IEBO VEB=6V 1.0max V mA VEBO 6 ... See More ⇒
8.8. Size:184K inchange semiconductor
2sc2023.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2023 DESCRIPTION Silicon NPN triple diffused planar transistor Collector-Emitter Breakdown Voltage- V = 300(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Series regulator,switch and general purpose applications ABSOLUTE MAXIMU... See More ⇒
8.9. Size:175K inchange semiconductor
2sc2026.pdf
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION Low Noise NF= 3.0dB TYP. @ f= 500MHz High Power Gain G = 15dB TYP. @ f= 500MHz pe High Gain Bandwidth Product f = 2.0GHz TYP. T 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in low noise amplifiers in the VHF... See More ⇒
8.10. Size:177K inchange semiconductor
2sc2027.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2027 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1500 V CBO ... See More ⇒
8.11. Size:184K inchange semiconductor
2sc2028.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2028 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 50V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒
Detailed specifications: 2SC2013, 2SC2014, 2SC2017, 2SC2018, 2SC2019, 2SC202, 2SC2020, 2SC2021, 2SC2383, 2SC2023, 2SC2024, 2SC2025, 2SC2026, 2SC2027, 2SC2028, 2SC2029, 2SC203
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