All Transistors. 2SC2026 Datasheet

 

2SC2026 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2026
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 14 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2000 MHz
   Collector Capacitance (Cc): 1.1 pF
   Forward Current Transfer Ratio (hFE), MIN: 25
   Noise Figure, dB: -
   Package: TO92

 2SC2026 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2026 Datasheet (PDF)

 ..1. Size:35K  nec
2sc2026.pdf

2SC2026

 ..2. Size:175K  inchange semiconductor
2sc2026.pdf

2SC2026 2SC2026

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC2026DESCRIPTIONLow NoiseNF= 3.0dB TYP. @ f= 500MHzHigh Power GainG = 15dB TYP. @ f= 500MHzpeHigh Gain Bandwidth Productf = 2.0GHz TYP.T100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in low noise amplifiers in the VHF

 8.1. Size:309K  1
2sc2021 2sc4038.pdf

2SC2026 2SC2026

 8.2. Size:313K  1
2sc2021m 2sc4010.pdf

2SC2026 2SC2026

 8.3. Size:309K  rohm
2sc2021.pdf

2SC2026 2SC2026

 8.4. Size:66K  fuji
2sc2028.pdf

2SC2026

 8.5. Size:137K  sony
2sc2020.pdf

2SC2026 2SC2026

 8.6. Size:23K  sanken-ele
2sc2023.pdf

2SC2026

2SC2023Silicon NPN Triple Diffused Planar TransistorApplication : Series Regulator, Switch, and General Purpose Electrical Characteristics External Dimensions MT-25(TO220) Absolute maximum ratings (Ta=25C) (Ta=25C)Symbol 2SC2023 Symbol Conditions 2SC2023Unit Unit0.24.80.210.20.12.0VCBO 300 ICBO VCB=300V 1.0maxV mAVCEO 300 IEBO VEB=6V 1.0maxV mAVEBO 6

 8.7. Size:184K  inchange semiconductor
2sc2022.pdf

2SC2026 2SC2026

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2022DESCRIPTIONCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN

 8.8. Size:184K  inchange semiconductor
2sc2023.pdf

2SC2026 2SC2026

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2023DESCRIPTIONSilicon NPN triple diffused planar transistorCollector-Emitter Breakdown Voltage-:V = 300(V)(Min.)(BR)CEO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSeries regulator,switch and general purpose applicationsABSOLUTE MAXIMU

 8.9. Size:177K  inchange semiconductor
2sc2027.pdf

2SC2026 2SC2026

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2027DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1500 VCBO

 8.10. Size:184K  inchange semiconductor
2sc2028.pdf

2SC2026 2SC2026

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2028DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low-frequency power amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Datasheet: 2SC2019 , 2SC202 , 2SC2020 , 2SC2021 , 2SC2022 , 2SC2023 , 2SC2024 , 2SC2025 , BF422 , 2SC2027 , 2SC2028 , 2SC2029 , 2SC203 , 2SC2031 , 2SC2032 , 2SC2033 , 2SC2034 .

 

 
Back to Top