2SC2169 Specs and Replacement
Type Designator: 2SC2169
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 1500 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT89
2SC2169 Substitution
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2SC2169 datasheet
Product Specification Silicon NPN Power Transistor 2SC2166 DESCRIPTION High Power Gain- Gpe 13.8dB @f= 27MHz, PO= 6W; VCC= 12V High Reliability APPLICATIONS Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 45 V VCER Collector-Emit... See More ⇒
isc Silicon NPN Power Transistor 2SC2167 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150V(Min) (BR)CEO DC Current Gain- h = 60(Min)@ (V = 10V, I = 0.7A) FE CE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for TV vertical output ,audio output driver and general purpose applications. ABSOLUTE MAXIMUM RA... See More ⇒
Detailed specifications: 2SC2161, 2SC2162, 2SC2163, 2SC2164, 2SC2165, 2SC2166, 2SC2167, 2SC2168, 2SC2073, 2SC217, 2SC2172, 2SC2173, 2SC2174, 2SC2175, 2SC2176, 2SC2177, 2SC2178
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