2SC2181 Datasheet. Specs and Replacement

Type Designator: 2SC2181  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 70 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Collector-Emitter Voltage |Vce|: 18 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 160 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: T-45E

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2SC2181 datasheet

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2SC2181

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2SC2181

Transistor 2SC2188 Silicon NPN epitaxial planer type For intermediate frequency amplification of TV image Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 ... See More ⇒

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2SC2181

Transistor 2SC2188 Silicon NPN epitaxial planer type For intermediate frequency amplification of TV image Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. Satisfactory linearity of forward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 ... See More ⇒

 8.3. Size:186K  inchange semiconductor

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2SC2181

isc Silicon NPN Power Transistor 2SC2189 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V (Min) (BR)CEO Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high speed switching and power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Col... See More ⇒

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Detailed specifications: 2SC2174, 2SC2175, 2SC2176, 2SC2177, 2SC2178, 2SC2179, 2SC218, 2SC2180, BC546, 2SC2182, 2SC2183, 2SC2184, 2SC2185, 2SC2186, 2SC2188, 2SC2189, 2SC219

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