2SC2185 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2185
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 75 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 275 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT89
2SC2185 Transistor Equivalent Substitute - Cross-Reference Search
2SC2185 Datasheet (PDF)
2sc2188.pdf
Transistor2SC2188Silicon NPN epitaxial planer typeFor intermediate frequency amplification of TV imageUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85
2sc2188 e.pdf
Transistor2SC2188Silicon NPN epitaxial planer typeFor intermediate frequency amplification of TV imageUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85
2sc2189.pdf
isc Silicon NPN Power Transistor 2SC2189DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Col
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
