2SC2186 Datasheet and Replacement
Type Designator: 2SC2186
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 110 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 9 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 275 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: SOT89
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2SC2186 Datasheet (PDF)
2sc2188.pdf

Transistor2SC2188Silicon NPN epitaxial planer typeFor intermediate frequency amplification of TV imageUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85
2sc2188 e.pdf

Transistor2SC2188Silicon NPN epitaxial planer typeFor intermediate frequency amplification of TV imageUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85
2sc2189.pdf

isc Silicon NPN Power Transistor 2SC2189DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Col
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
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