All Transistors. 2SC2199 Datasheet

 

2SC2199 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2199
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 60 W
   Maximum Collector-Base Voltage |Vcb|: 150 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 6 MHz
   Collector Capacitance (Cc): 100 pF
   Forward Current Transfer Ratio (hFE), MIN: 1000
   Noise Figure, dB: -
   Package: TO128

 2SC2199 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2199 Datasheet (PDF)

 9.1. Size:181K  toshiba
2sc2178.pdf

2SC2199
2SC2199

 9.2. Size:197K  toshiba
2sc2120.pdf

2SC2199
2SC2199

2SC2120 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2120 Audio Power Amplifier Applications Unit: mm High hFE: h = 100~320 FE (1) 1 watts amplifier applications. Complementary to 2SA950 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 35 VCollector-emitter voltage VCEO 30 VEmitter-base vo

 9.3. Size:176K  toshiba
2sc2173.pdf

2SC2199
2SC2199

 9.4. Size:72K  toshiba
2sc2118.pdf

2SC2199
2SC2199

 9.5. Size:73K  sanyo
2sc2161.pdf

2SC2199

 9.6. Size:171K  nec
2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf

2SC2199
2SC2199

NEC's NPN SILICON HIGH NE021FREQUENCY TRANSISTOR SERIESFEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB,2 GHz Gain CompressionDESCRIPTION00 (CHIP) 07/07BNEC's NE021 series of NPN silicon transistors provides eco-nomical solutions to wide ranges of amplifier a

 9.7. Size:52K  nec
2sc2148 2sc2149.pdf

2SC2199
2SC2199

DATA SHEETSILICON TRANSISTORS2SC2148, 2SC2149MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISTORDESCRIPTIONThe 2SC2148, 2SC2149 are economical microwave transistorsPACKAGE DIMENSIONS (Unit : mm)encapsulated into new hermetic stripline packages, "micro X".These are designed for small signal amplifier, low noise amplifier,1and oscillator applications in the L to

 9.8. Size:39K  nec
2sc4185 2sc2148 ne73430 ne73435.pdf

2SC2199
2SC2199

NPN SILICON GENERAL NE734PURPOSE TRANSISTOR SERIESFEATURES LOW NOISE FIGURE:

 9.9. Size:255K  mcc
2sc2120-y.pdf

2SC2199
2SC2199

MCCTM Micro Commercial Components2SC2120-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2120-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant

 9.10. Size:255K  mcc
2sc2120-o.pdf

2SC2199
2SC2199

MCCTM Micro Commercial Components2SC2120-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SC2120-YPhone: (818) 701-4933Fax: (818) 701-4939Features Complementary Pair With 2SA950 Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates TransistorsRoHS Compliant

 9.11. Size:38K  panasonic
2sc2188.pdf

2SC2199
2SC2199

Transistor2SC2188Silicon NPN epitaxial planer typeFor intermediate frequency amplification of TV imageUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85

 9.12. Size:42K  panasonic
2sc2188 e.pdf

2SC2199
2SC2199

Transistor2SC2188Silicon NPN epitaxial planer typeFor intermediate frequency amplification of TV imageUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9High transition frequency fT.Satisfactory linearity of forward current transfer ratio hFE.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85

 9.13. Size:129K  secos
2sc2120.pdf

2SC2199
2SC2199

2SC2120 0.8 A , 35 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current Gain G H Complementary to 2SA950 1Emitter 1112Collector 222333J 3Base CLASSIFICATION OF hFE A DMillimeter REF. Product-Rank 2SC2120-O 2SC2120-Y Min. Max

 9.14. Size:37K  advanced-semi
2sc2149.pdf

2SC2199

2SC2149NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2SC2149 is Designed for PACKAGE STYLE .085 4LPILL Oscillator and Amplifier Applications up to 2.0 GHz.FEATURES INCLUDE: High insertion gain. High power gain. Low Noise figure MAXIMUM RATINGS IC 70 mA VCBO 25 V VCEO 12 V VEBO 3.0 V PDISS 3.3 W @ TA = 25 C TJ -65 C to +200 C TSTG -65 C to +2

 9.15. Size:549K  jiangsu
2sc2120.pdf

2SC2199
2SC2199

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SC2120 TRANSISTOR (NPN)TO 92 FEATURES 1. EMITTER High DC Current Gain Complementary to 2SA950 2. COLLECTOR3. BASE Equivalent Circuit C2120=Device code C2120 Solid dot=Green molding compound device, XXX if none,the normal deviceXXX=Code 1ORDERING INFORMATION Pa

 9.16. Size:26K  jmnic
2sc2166.pdf

2SC2199
2SC2199

Product Specification Silicon NPN Power Transistor 2SC2166 DESCRIPTION High Power Gain- : Gpe 13.8dB @f= 27MHz, PO= 6W; VCC= 12V High Reliability APPLICATIONS Designed for 3 to 4 watts output power amplifiers in HF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 45 V VCER Collector-Emit

 9.17. Size:186K  inchange semiconductor
2sc2189.pdf

2SC2199
2SC2199

isc Silicon NPN Power Transistor 2SC2189DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed switching and power amplifierapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Col

 9.18. Size:230K  inchange semiconductor
2sc2167.pdf

2SC2199
2SC2199

isc Silicon NPN Power Transistor 2SC2167DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = 10V, I = 0.7A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical output ,audio output driver andgeneral purpose applications.ABSOLUTE MAXIMUM RA

 9.19. Size:177K  inchange semiconductor
2sc2151.pdf

2SC2199
2SC2199

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2151DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 600 VCBO

 9.20. Size:176K  inchange semiconductor
2sc2122.pdf

2SC2199
2SC2199

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2122DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 800 VCBO

 9.21. Size:185K  inchange semiconductor
2sc2166.pdf

2SC2199
2SC2199

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2166DESCRIPTIONHigh Power Gain-: G 13.8dB @f= 27MHz, P = 6W; V = 12Vpe O CCHigh ReliabilityMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for 3 to 4 watts output power amplifiers in HF bandmobile radio applications.ABSOLUTE MAXIMUM RATINGS (T =25

 9.22. Size:208K  inchange semiconductor
2sc2123.pdf

2SC2199
2SC2199

isc Silicon NPN Power Transistor 2SC2123DESCRIPTIONHigh Collector-Base Breakdown Voltage-: V = 1000V (Min)(BR)CBOHigh Current CapabilityHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV horizontal output and high power switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

 9.23. Size:190K  inchange semiconductor
2sc2120.pdf

2SC2199
2SC2199

isc Silicon NPN Transistor 2SC2120DESCRIPTIONHigh hFE(1)=100-3201 Watts Amplifier ApplicationsComplement to Type 2SA950Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio power amplifier ApplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 35 VCBOV Collector-Emitter

 9.24. Size:204K  inchange semiconductor
2sc2137.pdf

2SC2199
2SC2199

isc Silicon NPN Power Transistor 2SC2137DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

 9.25. Size:209K  inchange semiconductor
2sc2140.pdf

2SC2199
2SC2199

isc Silicon NPN Power Transistor 2SC2140DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 350V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

 9.26. Size:204K  inchange semiconductor
2sc2139.pdf

2SC2199
2SC2199

isc Silicon NPN Power Transistor 2SC2139DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V (Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

 9.27. Size:231K  inchange semiconductor
2sc2168.pdf

2SC2199
2SC2199

isc Silicon NPN Power Transistor 2SC2168DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEODC Current Gain-: h = 60(Min)@ (V = 10V, I = 0.7A)FE CE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for TV vertical output ,audio output driver andgeneral purpose applications.ABSOLUTE MAXIMUM RA

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: 2SD1007HQ

 

 
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