2SC2216 Datasheet. Specs and Replacement
Type Designator: 2SC2216 📄📄
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 45 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO92
2SC2216 Substitution
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2SC2216 datasheet
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This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer ... See More ⇒
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Transistor 2SC2206 Silicon NPN epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SA1254 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 Optimum for RF amplification of FM/AM radios. High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1... See More ⇒
UNISONIC TECHNOLOGIES CO., LTD 2SC2235 NPN SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 1 TO-92 FEATURES * Complimentary to UTC 2SA965 1 TO-92NL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2235L-x-T92-B 2SC2235G-x-T92-B TO-92 E C B Tape Box 2SC2235L-x-T92-K 2S... See More ⇒
2SC2235TM 0.8A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MOD FEATURES Complementary to 2SA965 A D B CLASSIFICATION OF hFE Product-Rank 2SC2235TM-O 2SC2235TM-Y K E F Range 80-160 120-240 C N G H Emitter Collector Base M J L Collector ... See More ⇒
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JMnic Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYM... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION With TO-220 package Complement to type 2SA968 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) ... See More ⇒
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Product Specification www.jmnic.com Silicon Power Transistors 2SC2246 DESCRIPTION High voltage ,high speed With TO-3 package APPLICATIONS Power switching Power amplification power driver PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS ... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS High voltage general amplifier TV video output amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMB... See More ⇒
2SC2235 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTER 3. BASE 4.700 5.100 2 3 1 Features 7.800 Complementary to 2SA965 B B 8.200 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600 0.800 Symbol Parameter Value Units B 0.350 VCBOB Collector-Base Voltage 120 V B 0.550 13.800 VCEOB Collector-Emitter Voltage 120 V B 14.200 VEBOB Emitter-Base Volt... See More ⇒
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2SC2230/2SC2230A TO-92MOD Transistor (NPN) 1. EMITTER TO-92MOD 1 2. COLLECTOR 2 3 3. BASE Features 5.800 6.200 High voltage VCEO=180V(2SC2230A) 8.400 High DC Current Gain 8.800 0.900 1.100 0.400 0.600 13.800 14.200 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1.500 TYP 2.900 Dimensions in inches and (millimeters) VCBO ... See More ⇒
2SC2235 TO-92MOD Transistor (NPN) TO-92MOD 1 1. EMITTER 2 2. COLLECTER 3 3. BASE Features Complementary to 2SA965 5.800 6.200 MAXIMUM RATINGS (TB B=25 unless otherwise noted) A 8.400 8.800 Symbol Parameter Value Units 0.900 1.100 VB B Collector-Base Voltage 120 V CBO 0.400 0.600 VB B Collector-Emitter Voltage 120 V CEO VB B Emitter-Base Voltage 5 V 13... See More ⇒
2SC2235 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SA965 Complementary to 2SA965. / Applications , Audio frequency amplifier and driver stage amplifier Applications. / Equivale... See More ⇒
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SMD Type Transistors NPN Transistors 2SC2295 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High transition frequency fT. Complementary to 2SA1022 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volt... See More ⇒
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2SC2275(3DA2275) 2SC2275A(3DA2275A) NPN /SILICON NPN TRANSISTOR Purpose Power amplifier applications. , 2SA985(3CA985)/2SA985A(3CA985A) Features Wide Safe Operating Area, complementary to 2SA985(3CA985)/2SA985A(3CA985A). /Absolute Maximum Ratings(Ta=25 ) ... See More ⇒
HG RF POWER TRANSISTOR 2SC2290A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Spec ified 12.5, 28MHz Ch aracteristic V s Output Power Po = 60W (Min.) PEP Power Gain Gp = 11.8dB (Min.) Collect Efficiency = 35% (Min.) or C _30dB Intermodulation Distortion IMD = (M ax .) MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Colle... See More ⇒
2SC2246T3BL Silicon NPN Power Transistor DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V V Collector-Base Voltage 450 CBO V Collector-Emitter Voltage 400 V CEO V Emitter-Base Voltage 5 V ... See More ⇒
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2246 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 600V (Min) CEO(SUS) High Switching Speed APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V V Collector-Base Voltage 1000 CBO V Collector-Emitter Voltage 600 V ... See More ⇒
2SC2246 High Voltage Switching Power Transistor 25A,800V QUICK REFERENCE Part Number Industry Part IC VCBO VCEO PD Package Packing Marking TO-3 2SC2246 2SC2246 25A 800V 600V 200W 50Pcs plywood Silicon NPN Transistors NPN 50 ... See More ⇒
isc Silicon NPN Power Transistor 2SC2248 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo... See More ⇒
isc Silicon NPN Power Transistor 2SC2242 DESCRIPTION High Breakdown Voltage- V = 300V(Min) (BR)CBO High Current-Gain Bandwidth Product- f = 20MHz(Min)@I = 20mA T C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Color TV sound output applications Recommended for sound output stage in line... See More ⇒
isc Silicon NPN Power Transistor 2SC2293 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo... See More ⇒
isc Silicon NPN Power Transistor 2SC2209 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 40V(Min) (BR)CEO High Collector Power Dissipation Complement to Type 2SA963 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplification. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALU... See More ⇒
isc Silicon NPN Power Transistor 2SC2247 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2266 DESCRIPTION With TO-3 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for color TV horizontal deflection driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO ... See More ⇒
isc Silicon NPN Power Transistor 2SC2244 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo... See More ⇒
isc Silicon NPN Power Transistor 2SC2275 DESCRIPTION Collector-Emitter Breakdown Voltage V = 120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA985 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency power amplifier applications High frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(... See More ⇒
isc Silicon NPN Power Transistor 2SC2292 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo... See More ⇒
isc Silicon NPN Power Transistor 2SC2258 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 250V(Min) (BR)CEO High Current-Gain Bandwidth Product Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For high breakdown voltage general amplification For video output amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum rating... See More ⇒
isc Silicon NPN Power Transistor 2SC2260 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = 100V(Min.) (BR)CEO Complement to Type 2SA980 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
isc Silicon NPN Power Transistor 2SC2238 DESCRIPTION Collector-Emitter Breakdown Voltage V =160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA968 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARA... See More ⇒
isc Silicon NPN Power Transistor 2SC2239 DESCRIPTION Collector-Emitter Breakdown Voltage V =160V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION Collector-Emitter Breakdown Voltage- VCEO= 60V(Min) DC Current Gain- hFE= 30(Min)@ (VCE= 5V, IC= 1A) High Collector Current High Collector Power Dissipation APPLICATIONS TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL P... See More ⇒
isc Silicon NPN Power Transistor 2SC2246 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS High voltage general amplifier TV video output amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2238B DESCRIPTION Collector-Emitter Breakdown Voltage V =200V (BR)CEO Good Linearity of h FE Complement to Type 2SA968B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒
isc Silicon NPN Power Transistor 2SC2262 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Complement to Type 2SA982 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
isc Silicon NPN Power Transistor 2SC2270 DESCRIPTION High Collector Power Dissipation P =10W(Tc=25 ), P =1.0W(Ta=25 ) C C High DC Current Gain h =140 450@V =2V,I =0.5A FE CE C h =70(Min)@V =2V,I =4A FE CE C Low Collector Saturation Voltage V =1.0V(Max)@I =4A,I 0.1A CE(sat) C B= Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLIC... See More ⇒
isc Silicon NPN Power Transistor 2SC2243 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNIT SYMBOL PARAMETER MAX V Collector-Base V... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Pow Transistor 2SC2229 DESCRIPTION High breakdown voltage Low output capacitance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage switching applications Driver stage audio amplifier applications Black and white TV video output applications ABSOLUTE M... See More ⇒
isc Silicon NPN Power Transistor 2SC2261 DESCRIPTION High Power Dissipation- P = 80W(Max.)@T =25 C C Collector-Emitter Breakdown Voltage- V = 120V(Min.) (BR)CEO Complement to Type 2SA981 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY... See More ⇒
isc Silicon NPN Power Transistor 2SC2245 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V (Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power switching Power amplification Power driver ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT V Collector-Base Vo... See More ⇒
isc Silicon NPN Power Transistor 2SC2238 A B DESCRIPTION With TO-220 packaging Complement to Type 2SA968 A B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electronic ignition Alternator regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT 2SC2238 160 V Collector-Base Voltage 2SC... See More ⇒
Detailed specifications: 2SC2210C, 2SC2210D, 2SC2210E, 2SC2210F, 2SC2212, 2SC2213, 2SC2214, 2SC2215, 2N2907, 2SC2217, 2SC2218, 2SC2219, 2SC222, 2SC2220, 2SC2221, 2SC2222, 2SC2223
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