2SC2258 Datasheet and Replacement

Power Transistors2SC2258Silicon NPN triple diffusion planar typeFor high breakdown voltage general amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features High collector-emitter voltage (Base open) VCEO High transition frequency fT TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings Ta

JMnic Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS For high breakdown voltage general amplification For video output amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum

isc Silicon NPN Power Transistor 2SC2258DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor high breakdown voltage general amplificationFor video output amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

JMnic Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS High voltage general amplifier TV video output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMB

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS High voltage general amplifier TV video output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings

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2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (

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2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications Unit: mm High gain: Gpe = 33dB (typ.) (f = 45 MHz) Good linearity of h . FEMaximum Ratings (Ta == 25C) ==Characteristics Symbol Rating Unit2SC2216 50Collector-base voltage VCBO V 2SC2717 30 2SC2216 45Collector-emitter VCEO

2SC2240 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2240 Low Noise Audio Amplifier Applications Unit: mm The 2SC2240 is a transistor for low frequency and low noise applications. This device is designed to lower noise figure in the region of low signal source impedance, and to lower the pulse noise. This is recommended for the first stages of Equalizer amplif

Power Transistors2SC2209Silicon NPN epitaxial planar typeFor low-frequency power amplificationUnit: mm7.5+0.50.1 2.90.2Complementary to 2SA0963120 Features Large collector power dissipation PC Output of 5 W can be obtained by a complementary pair with2SA0963 Absolute Maximum Ratings Ta = 25CParameter Symbol Rating Unit0.750.1Collector-base

Transistor2SC2295Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA1022+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the mag

Transistor2SC2295Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA1022+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the mag

Transistors2SC2206Silicon NPN epitaxial planar typeFor high-frequency amplification Unit: mmComplementary to 2SA12542.50.16.90.1(1.0)(1.5)(1.5) FeaturesR 0.9 Optimum for RF amplification of FM/AM radiosR 0.7 High transition frequency fT M type package allowing easy automatic and manual insertionas well as stand-alone fixing to the printed circuit

Transistor2SC2206Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA12546.9 0.1 2.5 0.11.51.5 R0.9 1.0Features R0.9Optimum for RF amplification of FM/AM radios.High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1

UNISONIC TECHNOLOGIES CO., LTD 2SC2235 NPN SILICON TRANSISTOR AUDIO POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS 1TO-92 FEATURES * Complimentary to UTC 2SA965 1TO-92NL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2235L-x-T92-B 2SC2235G-x-T92-B TO-92 E C B Tape Box 2SC2235L-x-T92-K 2S

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2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Amplifier dissipation NPN Silicon G HBaseEmitter CollectorJA DMillimeter REF. Min. Max.BA 4.40 4.70B 4.30 4.70KC 12.70 -D 3.30 3.81E 0.36 0.56F 0.36 0.51E C F

2SC2235TM 0.8A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MODFEATURES Complementary to 2SA965 A DBCLASSIFICATION OF hFE Product-Rank 2SC2235TM-O 2SC2235TM-YKE FRange 80-160 120-240CNG HEmitter Collector Base MJLCollector

2SC2274 0.5 A , 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Breakdown Voltage G H High Current Low Saturation Voltage EmitterJCollectorBase A DBCLASSIFICATION OF hFE(1) Millimeter REF.Min. Max.KProduct-Rank 2SC2274-D

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate TransistorsTO-92L 2SC2236 TRANSISTOR (NPN)1. EMITTER FEATURE2. COLLECTOR Complementary to 2SA966 and 3 Watts Output Applications. 3. BASE Equivalent Circuit C2236=Device code C2236Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFOR

JMnic Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYM

JMnic Product Specification Silicon NPN Power Transistors 2SC2238 2SC2238A 2SC2238B DESCRIPTION With TO-220 package Complement to type 2SA968 High breakdown votage APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25)

Product Specification www.jmnic.com Silicon Power Transistors 2SC2246 DESCRIPTION High voltage ,high speed With TO-3 package APPLICATIONS Power switching Power amplification power driver PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS

2SC2235 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTER 3. BASE 4.7005.100 2 3 1Features 7.800Complementary to 2SA965 B B8.200MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.6000.800Symbol Parameter Value UnitsB0.350VCBOB Collector-Base Voltage 120 V B0.55013.800VCEOB Collector-Emitter Voltage 120 V B14.200VEBOB Emitter-Base Volt

2SC2216(NPN)TO-92 Bipolar Transistors 1. BASE TO-92 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 45 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters)IC Collector Current -Continuo

2SC2236 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features7.8008.200 Complementary to 2SA966 and 3 Watts output Applications. 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units0.3500.550VCBO Collector-Base Voltage 30 V 13.80014.200VCEO Collector-Emitter Voltage 30 V VEBO Emitt

2SC2236 TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Complementary to 2SA966 and 3 Watts output Applications. 8.4008.800MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.9001.1000.400Symbol Parameter Value Units0.600VCBO Collector-Base Voltage 30 V13.80014.200VCEO Collector-Emitter Voltage 30 V

2SC2230/2SC2230A TO-92MOD Transistor (NPN)1. EMITTER TO-92MOD12. COLLECTOR 2 3 3. BASE Features5.8006.200 High voltage: VCEO=180V(2SC2230A) 8.400 High DC Current Gain 8.8000.9001.1000.4000.60013.80014.200MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units1.500 TYP2.900Dimensions in inches and (millimeters)VCBO

2SC2235 TO-92MOD Transistor (NPN)TO-92MOD1 1. EMITTER 22. COLLECTER 3 3. BASE Features Complementary to 2SA965 5.8006.200MAXIMUM RATINGS (TB B=25 unless otherwise noted) A8.4008.800Symbol Parameter Value Units0.9001.100VB B Collector-Base Voltage 120 V CBO0.4000.600VB B Collector-Emitter Voltage 120 V CEOVB B Emitter-Base Voltage 5 V 13

NPN NPN Epitaxial Silicon Transistor R2SC2240(NPN) APPLICATIONS Low noise audio amplifier applications FEATURES V =120V (min) High collector voltageV =120V (min) CEO CEO 2SA970 Complementary 2SA970 High DC current gain

2SC2235 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features 2SA965 Complementary to 2SA965. / Applications ,Audio frequency amplifier and driver stage amplifier Applications. / Equivale

2SC2216M(BR3DG2216M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features ,h FEHigh gain, good hFE linearity. / Applications TV final picture IF amplifier applications. / Equival

2SC2240 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features ,,Low noise, high DC current gain, high breakdown voltage / Applications Low noise audio amplifier applications.

SMD Type TransistorsNPN Transistors2SC2295SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High transition frequency fT. Complementary to 2SA10221 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volt

SMD Type TransistorsNPN Transistors2SC2223SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Colle

P2SC2222H NPN General Purpose Switching Transistor SOT-89 40V 600mA Voltage Current Features NPN epitaxial Silicon, Planar Design Collector-emitter voltage VCE = 40V Collector current = 600mA Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) Green molding compound as per IEC61249 Std.. (Halogen Free) Mechanical Data

2SC2275(3DA2275) 2SC2275A(3DA2275A) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications. :, 2SA985(3CA985)/2SA985A(3CA985A) Features: Wide Safe Operating Area, complementary to 2SA985(3CA985)/2SA985A(3CA985A). /Absolute Maximum Ratings(Ta=25)

HG RF POWER TRANSISTOR2SC2290ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR Spec ified 12.5, 28MHz Ch aracteristicV s Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collect Efficiency : = 35% (Min.) or C_30dB Intermodulation Distortion IMD = (M ax .) : MAXIMUM RATINGS (Tc = 25C)CHARACTERISTIC SYMBOL RATING UNIT Colle

2SC2246T3BLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITVV Collector-Base Voltage 450CBOV Collector-Emitter Voltage 400 VCEOV Emitter-Base Voltage 5 V

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2246DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 600V (Min)CEO(SUS)High Switching SpeedAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITVV Collector-Base Voltage 1000CBOV Collector-Emitter Voltage 600 V

2SC2246High Voltage Switching Power Transistor25A,800V QUICK REFERENCEPart Number Industry Part IC VCBO VCEO PDPackage Packing MarkingTO-32SC2246 2SC2246 25A 800V 600V 200W50PcsplywoodSilicon NPN Transistors NPN50

isc Silicon NPN Power Transistor 2SC2248DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo

isc Silicon NPN Power Transistor 2SC2242DESCRIPTIONHigh Breakdown Voltage-: V = 300V(Min)(BR)CBOHigh Current-GainBandwidth Product-: f = 20MHz(Min)@I = 20mAT CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsColor TV sound output applicationsRecommended for sound output stage in line

isc Silicon NPN Power Transistor 2SC2293DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo

isc Silicon NPN Power Transistor 2SC2209DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOHigh Collector Power DissipationComplement to Type 2SA963Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplification.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor 2SC2247DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2266DESCRIPTIONWith TO-3 PackageLow collector saturation voltageMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for color TV horizontal deflection driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBO

isc Silicon NPN Power Transistor 2SC2244DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo

isc Silicon NPN Power Transistor 2SC2275DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA985Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsHigh frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(

isc Silicon NPN Power Transistor 2SC2292DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum rating

isc Silicon NPN Power Transistor 2SC2260DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = 100V(Min.)(BR)CEOComplement to Type 2SA980Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Power Transistor 2SC2238DESCRIPTIONCollector-Emitter Breakdown Voltage: V =160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA968Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

isc Silicon NPN Power Transistor 2SC2239DESCRIPTIONCollector-Emitter Breakdown Voltage: V =160V(Min)(BR)CEOGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2233 DESCRIPTION Collector-Emitter Breakdown Voltage- :VCEO= 60V(Min) DC Current Gain- : hFE= 30(Min)@ (VCE= 5V, IC= 1A) High Collector Current High Collector Power Dissipation APPLICATIONS TV Horizontal Deflection Output Application ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P

isc Silicon NPN Power Transistor 2SC2246DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2238BDESCRIPTIONCollector-Emitter Breakdown Voltage: V =200V(BR)CEOGood Linearity of hFEComplement to Type 2SA968BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsDriver stage amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =2

isc Silicon NPN Power Transistor 2SC2262DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = 140V(Min.)(BR)CEOComplement to Type 2SA982Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Power Transistor 2SC2270DESCRIPTIONHigh Collector Power DissipationP =10W(Tc=25), P =1.0W(Ta=25)C CHigh DC Current Gain: h =140~450@V =2V,I =0.5AFE CE Ch =70(Min)@V =2V,I =4AFE CE CLow Collector Saturation VoltageV =1.0V(Max)@I =4A,I 0.1ACE(sat) C B=Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLIC

isc Silicon NPN Power Transistor 2SC2243DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aUNITSYMBOL PARAMETER MAXV Collector-Base V

INCHANGE Semiconductorisc Silicon NPN Pow Transistor 2SC2229DESCRIPTIONHigh breakdown voltageLow output capacitance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage switching applicationsDriver stage audio amplifier applicationsBlack and white TV video output applicationsABSOLUTE M

isc Silicon NPN Power Transistor 2SC2261DESCRIPTIONHigh Power Dissipation-: P = 80W(Max.)@T =25C CCollector-Emitter Breakdown Voltage-: V = 120V(Min.)(BR)CEOComplement to Type 2SA981Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSY

isc Silicon NPN Power Transistor 2SC2245DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo

isc Silicon NPN Power Transistor 2SC2238 A BDESCRIPTIONWith TO-220 packagingComplement to Type 2SA968 A BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT2SC2238 160V Collector-Base Voltage 2SC