2SC2258AY Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2258AY
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 4 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
2SC2258AY Transistor Equivalent Substitute - Cross-Reference Search
2SC2258AY Datasheet (PDF)
2sc2258a.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS High voltage general amplifier TV video output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMB
2sc2258a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2258A DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS High voltage general amplifier TV video output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings
2sc2258.pdf
Power Transistors2SC2258Silicon NPN triple diffusion planar typeFor high breakdown voltage general amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features High collector-emitter voltage (Base open) VCEO High transition frequency fT TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings Ta
2sc2258.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2258 DESCRIPTION With TO-126 package High transition frequency fT High collector-emitter voltage VCEO APPLICATIONS For high breakdown voltage general amplification For video output amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum
2sc2258.pdf
isc Silicon NPN Power Transistor 2SC2258DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 250V(Min)(BR)CEOHigh Current-Gain Bandwidth ProductMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor high breakdown voltage general amplificationFor video output amplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
