2SC2271 Datasheet and Replacement
Type Designator: 2SC2271
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.9
W
Maximum Collector-Base Voltage |Vcb|: 300
V
Maximum Collector-Emitter Voltage |Vce|: 300
V
Maximum Emitter-Base Voltage |Veb|: 6
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 50
MHz
Collector Capacitance (Cc): 7.5
pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package:
TO92
-
BJT ⓘ Cross-Reference Search
2SC2271 Datasheet (PDF)
8.1. Size:94K toshiba
2sc2270.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.5. Size:78K secos
2sc2274.pdf
2SC2274 0.5 A , 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Breakdown Voltage G H High Current Low Saturation Voltage EmitterJCollectorBase A DBCLASSIFICATION OF hFE(1) Millimeter REF.Min. Max.KProduct-Rank 2SC2274-D
8.6. Size:156K jmnic
2sc2275.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYM
8.7. Size:175K foshan
2sc2275-a 3da2275-a.pdf
2SC2275(3DA2275) 2SC2275A(3DA2275A) NPN /SILICON NPN TRANSISTOR : Purpose: Power amplifier applications. :, 2SA985(3CA985)/2SA985A(3CA985A) Features: Wide Safe Operating Area, complementary to 2SA985(3CA985)/2SA985A(3CA985A). /Absolute Maximum Ratings(Ta=25)
8.8. Size:198K inchange semiconductor
2sc2275.pdf
isc Silicon NPN Power Transistor 2SC2275DESCRIPTIONCollector-Emitter Breakdown Voltage: V = 120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA985Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency power amplifier applicationsHigh frequency power amplifier applicationsABSOLUTE MAXIMUM RATINGS(
8.9. Size:125K inchange semiconductor
2sc2275 2sc2275a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2275 2SC2275A DESCRIPTION With TO-220 package Complement to type 2SA985/985A High breakdown voltage APPLICATIONS For low frequency and high frequency power amplifer applicatons PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum rating
8.10. Size:216K inchange semiconductor
2sc2270.pdf
isc Silicon NPN Power Transistor 2SC2270DESCRIPTIONHigh Collector Power DissipationP =10W(Tc=25), P =1.0W(Ta=25)C CHigh DC Current Gain: h =140~450@V =2V,I =0.5AFE CE Ch =70(Min)@V =2V,I =4AFE CE CLow Collector Saturation VoltageV =1.0V(Max)@I =4A,I 0.1ACE(sat) C B=Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLIC
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