All Transistors. 2SC2291 Datasheet

 

2SC2291 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SC2291

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.4 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 100 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 125 °C

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SP0

2SC2291 Transistor Equivalent Substitute - Cross-Reference Search

2SC2291 Datasheet PDF:

4.1. 2sc2290.pdf Size:169K _toshiba

2SC2291
2SC2291

2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : ?C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (Tc =

4.2. 2sc2295_e.pdf Size:51K _panasonic

2SC2291
2SC2291

Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3

4.3. 2sc2295.pdf Size:51K _panasonic

2SC2291
2SC2291

Transistor 2SC2295 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm Complementary to 2SA1022 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 Optimum for RF amplification of FM/AM radios. High transition frequency fT. 1 Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 3

4.4. 2sc2298.pdf Size:348K _hitachi

2SC2291
2SC2291

4.5. 2sc2293.pdf Size:203K _inchange_semiconductor

2SC2291
2SC2291

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2293 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emit

4.6. 2sc2292.pdf Size:202K _inchange_semiconductor

2SC2291
2SC2291

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2292 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Power switching ·Power amplification ·Power driver ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emit

4.7. 2sc2295.pdf Size:1104K _kexin

2SC2291
2SC2291

SMD Type Transistors NPN Transistors 2SC2295 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● High transition frequency fT. ● Complementary to 2SA1022 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volt

Datasheet: 2SC2287 , 2SC2287M , 2SC2288 , 2SC2288M , 2SC2289 , 2SC2289M , 2SC229 , 2SC2290 , BC337 , 2SC2292 , 2SC2293 , 2SC2294 , 2SC2295 , 2SC2296 , 2SC2297 , 2SC2298 , 2SC2298A .

 


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