2SC2291 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2291
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.4 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: SOT89
2SC2291 Transistor Equivalent Substitute - Cross-Reference Search
2SC2291 Datasheet (PDF)
2sc2290.pdf
2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (
2sc2295.pdf
Transistor2SC2295Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA1022+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the mag
2sc2295 e.pdf
Transistor2SC2295Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA1022+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the mag
2sc2295.pdf
SMD Type TransistorsNPN Transistors2SC2295SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High transition frequency fT. Complementary to 2SA10221 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volt
2sc2290a.pdf
HG RF POWER TRANSISTOR2SC2290ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR Spec ified 12.5, 28MHz Ch aracteristicV s Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collect Efficiency : = 35% (Min.) or C_30dB Intermodulation Distortion IMD = (M ax .) : MAXIMUM RATINGS (Tc = 25C)CHARACTERISTIC SYMBOL RATING UNIT Colle
2sc2293.pdf
isc Silicon NPN Power Transistor 2SC2293DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo
2sc2292.pdf
isc Silicon NPN Power Transistor 2SC2292DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
