2SC2298C Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2298C
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 8 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO126
2SC2298C Transistor Equivalent Substitute - Cross-Reference Search
2SC2298C Datasheet (PDF)
2sc2290.pdf
2SC2290 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) Unit in mm Specified 12.5V, 28MHz Characteristics Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collector Efficiency : C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (
2sc2295.pdf
Transistor2SC2295Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA1022+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the mag
2sc2295 e.pdf
Transistor2SC2295Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SA1022+0.22.8 0.3+0.25Features 0.65 0.15 1.5 0.05 0.65 0.15Optimum for RF amplification of FM/AM radios.High transition frequency fT.1Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the mag
2sc2295.pdf
SMD Type TransistorsNPN Transistors2SC2295SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High transition frequency fT. Complementary to 2SA10221 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Volt
2sc2290a.pdf
HG RF POWER TRANSISTOR2SC2290ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR Spec ified 12.5, 28MHz Ch aracteristicV s Output Power : Po = 60W (Min.) PEP Power Gain : Gp = 11.8dB (Min.) Collect Efficiency : = 35% (Min.) or C_30dB Intermodulation Distortion IMD = (M ax .) : MAXIMUM RATINGS (Tc = 25C)CHARACTERISTIC SYMBOL RATING UNIT Colle
2sc2293.pdf
isc Silicon NPN Power Transistor 2SC2293DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo
2sc2292.pdf
isc Silicon NPN Power Transistor 2SC2292DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V (Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower switchingPower amplificationPower driverABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITV Collector-Base Vo
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SC2619C | 2SC2633 | AC173 | AD-BC846-B
History: 2SC2619C | 2SC2633 | AC173 | AD-BC846-B
LIST
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050