2SC2331R
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2331R
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 60
V
Maximum Emitter-Base Voltage |Veb|: 8
V
Maximum Collector Current |Ic max|: 0.7
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 30
MHz
Collector Capacitance (Cc): 8
pF
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package:
TO92
2SC2331R
Transistor Equivalent Substitute - Cross-Reference Search
2SC2331R
Datasheet (PDF)
7.2. Size:99K savantic
2sc2331.pdf
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base Fi
7.3. Size:45K jmnic
2sc2331.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SC2331 DESCRIPTION With TO-220 package Complement to type 2SA1008 Low collector saturation voltage Fast switching speed APPLICATIONS Switching regulators DC/DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterFig
7.4. Size:223K inchange semiconductor
2sc2331.pdf
isc Silicon NPN Power Transistor 2SC2331DESCRIPTIONLow Collector Saturation Voltage-: V = 0.6V(Max.)@ I = 1ACE(sat) CFast Switching SpeedComplement to Type 2SA1008Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use as a driver in devices such as switchingregulators, DC/DC converters, and high-frequency pow
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