2SC2336B
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2336B
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25
W
Maximum Collector-Base Voltage |Vcb|: 200
V
Maximum Collector-Emitter Voltage |Vce|: 180
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 1.5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 95
MHz
Collector Capacitance (Cc): 30
pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package:
TO220
2SC2336B
Transistor Equivalent Substitute - Cross-Reference Search
2SC2336B
Datasheet (PDF)
..1. Size:155K inchange semiconductor
2sc2336 2sc2336a 2sc2336b.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220)
7.1. Size:196K jmnic
2sc2336.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2336 2SC2336A 2SC2336B DESCRIPTION With TO-220 package Complement to type 2SA1006, 2SA1006A,2SA1006B APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 Emi
7.2. Size:198K inchange semiconductor
2sc2336.pdf
isc Silicon NPN Power Transistor 2SC2336DESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-: V = 180V(Min)(BR)CEOWide Area of Safe OperationComplement to Type 2SA1006Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSAdudio frequency power amplifierHigh frequency power amplifierABSOLUTE MAX
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