All Transistors. 2SC2356 Datasheet

 

2SC2356 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC2356

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 100 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 10 A

Max. Operating Junction Temperature (Tj): 175 °C

Forward Current Transfer Ratio (hFE), MIN: 20

Noise Figure, dB: -

Package: TO3

2SC2356 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC2356 Datasheet (PDF)

1.1. 2sc2356.pdf Size:237K _fuji

2SC2356
2SC2356

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.1. 2sc2353.pdf Size:37K _nec

2SC2356

4.2. 2sc2351.pdf Size:30K _nec

2SC2356
2SC2356

DATA SHEET SILICON TRANSISTOR 2SC2351 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES NF 1.5 dB TYP. @ f = 1.0 GHz PACKAGE DIMENSIONS (Units: mm) MAG 14 dB TYP. @ f = 1.0 GHz 2.80.2 +0.1 1.5 0.65-0.15 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCBO 25 V 2 Collector to Emitter Voltage VCEO 12 V Emitter to Base Volta

4.3. 2sc2352.pdf Size:36K _nec

2SC2356

4.4. 2sc2351 2sc2149 2sc4092 ne02133 ne02135 ne02139.pdf Size:171K _nec

2SC2356
2SC2356

NEC's NPN SILICON HIGH NE021 FREQUENCY TRANSISTOR SERIES FEATURES HIGH INSERTION GAIN: 18.5 dB at 500 MHz LOW NOISE FIGURE: 1.5 dB at 500 MHz HIGH POWER GAIN: 12 dB at 2 GHz LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION 00 (CHIP) 07/07B NEC's NE021 series of NPN silicon transistors provides eco- nomical solutions to wide ranges of amplifier and oscillat

4.5. 2sc2358.pdf Size:129K _inchange_semiconductor

2SC2356
2SC2356

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2358 DESCRIPTION · ·With TO-3 package ·High voltage,high speed APPLICATIONS ·Designed for switching-mode power supplies ,CRT scanning,inverters, and other industrial applications PINNING(see fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Abso

4.6. 2sc2351.pdf Size:106K _inchange_semiconductor

2SC2356
2SC2356

INCHANGE Semiconductor isc RF Product Specification isc Silicon NPN RF Transistor 2SC2351 DESCRIPTION ·Low Noise NF = 1.5 dB TYP. ; @ f = 1 GHz ·High Maximum Available Gain MAG = 14 dB TYP. ; @ f = 1 GHz APPLICATIONS ·Designed for use as UHF oscillators and a UHF mixer in a tuner of a TV receiver. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collecto

4.7. 2sc2351.pdf Size:902K _kexin

2SC2356
2SC2356

SMD Type Transistors NPN Transistors 2SC2351 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=70mA ● Collector Emitter Voltage VCEO=12V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collecto

Datasheet: 2SC2348 , 2SC2349 , 2SC235 , 2SC2350 , 2SC2351 , 2SC2352 , 2SC2353 , 2SC2354 , D882 , 2SC2357 , 2SC2358 , 2SC2359 , 2SC236 , 2SC2360 , 2SC2361 , 2SC2361A , 2SC2362 .

 


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