2SC2464 Specs and Replacement
Type Designator: 2SC2464
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 125 °C
Electrical Characteristics
Transition Frequency (ft): 450 MHz
Collector Capacitance (Cc): 0.5 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: TO131
- BJT ⓘ Cross-Reference Search
2SC2464 datasheet
8.2. Size:24K hitachi
2sc2463.pdf 
2SC2463 Silicon NPN Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2463 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 150 mW Junction temper... See More ⇒
8.4. Size:24K hitachi
2sc2462.pdf
2SC2462 Silicon NPN Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2462 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 50 V Collector to emitter voltage VCEO 40 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Emitter current IE 100 mA Collector power dissipat... See More ⇒
8.6. Size:324K kexin
2sc2463.pdf
SMD Type Transistors NPN Transistors 2SC2463 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=50V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 55 Colle... See More ⇒
8.7. Size:326K kexin
2sc2462.pdf
SMD Type Transistors NPN Transistors 2SC2462 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=40V 1 2 +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50 Collect... See More ⇒
8.8. Size:178K inchange semiconductor
2sc2461a.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2461A DESCRIPTION With TO-3 Package Complementary to 2SA1051A Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Recommended for 10W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol... See More ⇒
8.9. Size:203K inchange semiconductor
2sc2461.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2461 DESCRIPTION With TO-3 Package Complementary to 2SA1051 Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Recommended for 10W high-fidelity audio frequency amplifier output stage ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta... See More ⇒
8.10. Size:194K inchange semiconductor
2sc2460.pdf
isc Silicon NPN Power Transistor 2SC2460 DESCRIPTION High Current Capability Collector-Emitter Breakdown Voltage- V = 140V(Min.) (BR)CEO Complement to Type 2SA1050 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power amplifer and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAM... See More ⇒
Detailed specifications: 2SC2462, 2SC2462B, 2SC2462C, 2SC2462D, 2SC2463, 2SC2463D, 2SC2463E, 2SC2463F, 2SD313, 2SC2465, 2SC2466, 2SC2467, 2SC2468, 2SC2469, 2SC247, 2SC2470, 2SC2471
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