2SC2495M Specs and Replacement
Type Designator: 2SC2495M
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 17 W
Maximum Collector-Base Voltage |Vcb|: 25 V
Maximum Emitter-Base Voltage |Veb|: 2 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 4 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: XM24
2SC2495M Substitution
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2SC2495M datasheet
2SC2498 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2498 VHF UHF Band Low Noise Amplifier Application Unit mm Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Base current IB 25 mA Collector power dissipation PC 300... See More ⇒
Power Transistors 2SC2497, 2SC2497A Silicon NPN epitaxial planar type Unit mm For low-frequency power amplification 8.0+0.5 0.1 3.2 0.2 Complementary to 2SA1096 and 2SA1096A 3.16 0.1 Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute Maximum Ratings TC = 25 C Parameter... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A DESCRIPTION With TO-126 package Complement to type 2SA1096/A High collector to emitter voltage VCEO APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) ... See More ⇒
Detailed specifications: 2SC249, 2SC2490, 2SC2491, 2SC2492, 2SC2493, 2SC2494, 2SC2494M, 2SC2495, 2SC828, 2SC2496, 2SC2496A, 2SC2497, 2SC2497A, 2SC2498, 2SC2499, 2SC25, 2SC250
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