2SC2496A Datasheet and Replacement
Type Designator: 2SC2496A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 37 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 500 MHz
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO129
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2SC2496A Datasheet (PDF)
2sc2498.pdf

2SC2498 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2498 VHF~UHF Band Low Noise Amplifier Application Unit: mm Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 30 VCollector-emitter voltage VCEO 20 VEmitter-base voltage VEBO 3 VCollector current IC 50 mABase current IB 25 mACollector power dissipation PC 300
2sc2497.pdf

Power Transistors2SC2497, 2SC2497ASilicon NPN epitaxial planar typeUnit: mmFor low-frequency power amplification8.0+0.50.13.20.2Complementary to 2SA1096 and 2SA1096A 3.160.1 Features High collector to emitter voltage VCEO TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute Maximum Ratings TC = 25CParameter
2sc2497 2sc2497a.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2497 2SC2497A DESCRIPTION With TO-126 package Complement to type 2SA1096/A High collector to emitter voltage VCEO APPLICATIONS For low-frequency power amplification PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: ASY74RT | ET6002 | BLX20 | DM150P | HUN5215 | 2SA744 | BD612
Keywords - 2SC2496A transistor datasheet
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History: ASY74RT | ET6002 | BLX20 | DM150P | HUN5215 | 2SA744 | BD612



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