2SC25 Specs and Replacement
Type Designator: 2SC25
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.06 A
Max. Operating Junction Temperature (Tj): 175 °C
Electrical Characteristics
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN: 25
Package: TO5
2SC25 Substitution
- BJT ⓘ Cross-Reference Search
2SC25 datasheet
2sc2937 2sc3224 2sc3262 2sc3261 2sc3259 2sc2507 2sc2506 2sc2829 2sc2827 2sc2826.pdf 
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2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm Specified 28V, 28MHz Characteristics Output Power Po = 150W (Min.) PEP Power Gain Gp = 12.2dB (Min.) Collector Efficiency C = 35% (Min.) Intermodulation Distortion IMD = -30dB (Max.) MAXIMUM RATINGS (T... See More ⇒
2SC2551 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 Industrial Applications Hight Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = 300 V, V = 300 V CEO Low saturation voltage V = 0.5 V (max) CE (sat) Small collector output capacita... See More ⇒
2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2532 Audio Frequency Amplifier Applications Unit mm Driver Stage for LED Lamp Applications Temperature Compensation Applications High hFE hFE (1) = 5000 (min) (IC = 10 mA) h (2) = 10000 (min) (IC = 100 mA) FE Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base ... See More ⇒
DATA SHEET NPN SILICON TRANSISTOR 2SC2570A HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages. FEATURES Low noise and high gain NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA Wide dynamic range NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 1... See More ⇒
DATA SHEET SILICON POWER TRANSISTOR 2SC2517 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching. This transistor is ideal for use in drivers such as switching regulators, DC/DC converters, high-frequency power amplifiers. FEATURES ow collector saturation voltage ... See More ⇒
Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features Excellent collector current IC characteristics of forward current transfer ratio hFE High transition frequency fT TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute... See More ⇒
2SC2512 Silicon NPN Triple Diffused Application VHF Amplifier VHF TV Tuner, Mixer Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC2512 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipati... See More ⇒
2SC2396, 2SC2543, 2SC2544 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1025, 2SA1081 and 2SA1082 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2396, 2SC2543, 2SC2544 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC2396 2SC2543 2SC2544 Unit Collector to base voltage VCBO 60 90 120 V Collector to emitter voltage V... See More ⇒
2SC2545, 2SC2546, 2SC2547 Silicon NPN Epitaxial Application Low frequency low noise amplifier Complementary pair with 2SA1083, 2SA1084 and 2SA1085 Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2545, 2SC2546, 2SC2547 Absolute Maximum Ratings (Ta = 25 C) Item Symbol 2SC2545 2SC2546 2SC2547 Unit Collector to base voltage VCBO 60 90 120 V Collector to emitter... See More ⇒
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION With TO-220C package Low collector saturation voltage Wide area of safe operation APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maxi... See More ⇒
2SC2551 0.1 A , 300 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Voltage G H Low Saturation Voltage Small Collector Output Capacitance Complementary to 2SA1091 J Emitter A D Collector Base B CLASSIFICATION OF hFE(1) K Millimet... See More ⇒
2SC2580 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1105 ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 180 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 9 A ... See More ⇒
2SC2581 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1106 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 200 V Collector-Emitter Voltage VCEO 140 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 10 A Collecto... See More ⇒
2SC2577 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1102 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 120 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 8 A Collector... See More ⇒
2SC2578 NPN PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SA1104 ABSOLUTE MAXIMUM RATING (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 100 V Emitter-Base voltage VEBO 6 V Collector Current (DC) IC 7 A ... See More ⇒
2SC2585 NPN SILICON RF TRANSISTOR PACKAGE STYLE DESCRIPTION The 2SC2585 is a Common Emitter Device Designed for Low Niose Amplifier and Medium Power Oscillator Applications up to 8.5 GHz. MAXIMUM RATINGS IC 65 mA VCEO 12 V VCBO 25 V VEB 1.5 V PT 400 mW @ TC = 166 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC DIMENSIONS IN MILLIMETERS 1 = BASE 3 = COLLECTOR 85 OC/W JC 2 & ... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2582 DESCRIPTION With TO-126 package Large collector power dissipation High transition frequency APPLICATIONS Audio frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT ... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2580 DESCRIPTION With TO-3PN package Complement to type 2SA1105 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2581 DESCRIPTION With TO-3PN package Complement to type 2SA1106 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2564 DESCRIPTION With MT-200 package Complement to type 2SA1094 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings ... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2562 DESCRIPTION With TO-220 package Complement to type 2SA1012 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Emitter Absolute... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2577 DESCRIPTION With TO-3PN package Complement to type 2SA1102 High power dissipation High current capability APPLICATIONS Audio power amplifier DC-DC converter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Abs... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2579 DESCRIPTION With TO-3PN package High power dissipation High current capability APPLICATIONS For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2590 DESCRIPTION With TO-126 package Complement to type 2SA1110 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS For low-frequency power amplification ... See More ⇒
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2578 DESCRIPTION With TO-3PN package Complementary to 2SA1104 High Power Dissipation High Current Capability APPLICATIONS Audio power amplifier DC TO DC Converter PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and sym... See More ⇒
JMnic Product Specification Silicon NPN Power Transistors 2SC2565 DESCRIPTION With MT-200 package Complement to type 2SA1095 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings ... See More ⇒
2SC2500 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features 7.800 8.200 Strobe flash applications 0.600 0.800 Medium power amplifier applications 0.350 0.550 13.800 14.200 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.270 TYP 2.440 2.640 Symbol Parameter Value Units 0.000... See More ⇒
2SC2551(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Vo... See More ⇒
2SC2500 TO-92MOD Transistor (NPN) TO-92MOD 1 1. EMITTER 2 3 2. COLLECTOR 3. BASE 5.800 Features 6.200 Strobe flash applications 8.400 8.800 Medium power amplifier applications 0.900 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600 Symbol Parameter Va... See More ⇒
SMD Type Transistors NPN Transistors 2SC2532 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA 1 2 Collector Emitter Voltage VCEO=40V +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collect... See More ⇒
HG RF POWER TRANSISTOR 2SC2510A Semiconductors HG ROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power Po = 150WPEP (Min.) Power Gain Gp = 12.2dB (Min.) Collector Efficiency = 35% (Min.) C _30dB Intermodulation Distortion IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collecto... See More ⇒
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2581 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Complement to Type 2SA1106 APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage... See More ⇒
2sc2517m 2sc2517l 2sc2517k.pdf
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC2517 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT ... See More ⇒
isc Silicon NPN Power Transistor 2SC2582 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 35V(Min) (BR)CEO Good Linearity of h FE High Collector Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for AF power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN... See More ⇒
isc Silicon NPN Power Transistor 2SC2523 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Complement to Type 2SA1073 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators D... See More ⇒
isc Silicon NPN Power Transistor 2SC2555 DESCRIPTION High Collector-Emitter Voltage- V = 400V(Min) (BR)CEO High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications Minimum Lot-to-Lot variations for robust device... See More ⇒
isc Silicon NPN Power Transistor 2SC2526 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1076 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
isc Silicon NPN Power Transistor 2SC2580 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col... See More ⇒
isc Silicon NPN Power Transistor 2SC2541 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switch-mode CTV supply systems applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol... See More ⇒
isc Silicon NPN Power Transistor 2SC2552 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2507 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage- VCE(sat)= 0.7V(Max.)@ IC= 10A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are partic... See More ⇒
isc Silicon NPN Power Transistor 2SC2581 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Complement to Type 2SA1106 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
isc Silicon NPN Power Transistor 2SC2564 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1094 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2563 DESCRIPTION High power dissipation Low Saturation Voltage High V CBO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency output amplifier and general purpose application ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER ... See More ⇒
isc Silicon NPN Power Transistor 2SC2594 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 20V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifier For electronic flash unit Converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
isc Silicon NPN Power Transistors 2SC2501 DESCRIPTION With TO-220 packaging Reliable performance at higher powers Accurate reproduction of Input signal Greater dynamic range Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RAT... See More ⇒
isc Silicon NPN Power Transistor 2SC2562 DESCRIPTION Low Collector Saturation Voltage V = 0.4(V)(Max)@I = 3A CE(sat) C High Switching Speed Complement to Type 2SA1012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒
isc Silicon NPN Power Transistor 2SC2518 DESCRIPTION High Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Low Collector Saturation Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and ultrasonic applicance applications. ABSOLUTE MAXIM... See More ⇒
isc Silicon NPN Power Transistor 2SC2528 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 0.7A CE(sat) C Complement to Type 2SA1078 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier, Audio power amplifier Dirv... See More ⇒
isc Silicon NPN Power Transistor 2SC2577 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1102 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V ... See More ⇒
INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2570A DESCRIPTION Low Noise and High Gain NF = 1.5 dB TYP. Ga = 8 dB TYP. @f = 1.0 GHz, V = 10 V, I = 5 mA CE C Wide Dynamic Range NF = 1.9 dB TYP. Ga = 9 dB TYP. @f = 1.0 GHz, V = 10 V, I = 15 mA CE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2525 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a S... See More ⇒
isc Silicon NPN Power Transistor 2SC2579 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Good Linearity of h FE High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22... See More ⇒
isc Silicon NPN Power Transistor 2SC2522 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Complement to Type 2SA1072 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators D... See More ⇒
isc Silicon NPN Power Transistor 2SC2553 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 400V(Min) (BR)CEO Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
isc Silicon NPN Power Transistor 2SC2564 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1094 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC2592 DESCRIPTION Silicon NPN epitaxial planar type High transition frequency Complement to Type 2SA1112 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF Driver,High power Amplifier complementary Pairs with 2SA1112. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
isc Silicon NPN Power Transistor 2SC2517 DESCRIPTION Low Collector Saturation Voltage Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIM... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2590 DESCRIPTION Silicon NPN epitaxial planar type High transition frequency Complementary to 2SA1110 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
isc Silicon NPN Power Transistor 2SC2578 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1103 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
isc Silicon NPN Power Transistor 2SC2502 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed , power switching in in... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2556 DESCRIPTION High transistor frequency Low Saturation Voltage High V CBO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency output amplifier ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base V... See More ⇒
isc Silicon NPN Power Transistor 2SC2516 DESCRIPTION Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching, and is ideal for use as a driver in devices such as switching reglators,DC/DC converters, and high frequency power amplifiers. ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2556 2SC2556A DESCRIPTION With TO-126 package High VCBO Low collector saturation voltage High transition frequency APPLICATIONS Audio frequency output amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) ... See More ⇒
isc Silicon NPN Power Transistor 2SC2565 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1095 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V... See More ⇒
isc Silicon NPN Power Transistor 2SC2527 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications. High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2534 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed high voltage switching application Switching regulator applications High speed DC-DC converter applicatio... See More ⇒
Detailed specifications: 2SC2495, 2SC2495M, 2SC2496, 2SC2496A, 2SC2497, 2SC2497A, 2SC2498, 2SC2499, TIP120, 2SC250, 2SC2500, 2SC2500A, 2SC2500B, 2SC2500C, 2SC2500D, 2SC2502, 2SC2503
Keywords - 2SC25 pdf specs
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