All Transistors. 2SC2504 Datasheet

 

2SC2504 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2504
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO220

 2SC2504 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2504 Datasheet (PDF)

 ..1. Size:287K  no
2sc2504.pdf

2SC2504
2SC2504

 8.2. Size:180K  toshiba
2sc2500.pdf

2SC2504
2SC2504

 8.3. Size:135K  mospec
2sc2502.pdf

2SC2504
2SC2504

AAA

 8.4. Size:77K  no
2sc2501.pdf

2SC2504
2SC2504

 8.5. Size:210K  lge
2sc2500 to-92l.pdf

2SC2504
2SC2504

2SC2500 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features7.8008.200 Strobe flash applications 0.6000.800 Medium power amplifier applications 0.3500.55013.80014.200Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.270 TYP2.4402.640Symbol Parameter Value Units0.000

 8.6. Size:244K  lge
2sc2500 to-92mod.pdf

2SC2504
2SC2504

2SC2500 TO-92MOD Transistor (NPN)TO-92MOD11. EMITTER 2 3 2. COLLECTOR 3. BASE 5.800Features 6.200 Strobe flash applications 8.4008.800 Medium power amplifier applications 0.9001.1000.4000.600 13.80014.2001.500 TYP2.900Dimensions in inches and (millimeters)3.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600Symbol Parameter Va

 8.7. Size:239K  inchange semiconductor
2sc2507.pdf

2SC2504
2SC2504

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2507 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 10A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are partic

 8.8. Size:193K  inchange semiconductor
2sc2501.pdf

2SC2504
2SC2504

isc Silicon NPN Power Transistors 2SC2501DESCRIPTIONWith TO-220 packagingReliable performance at higher powersAccurate reproduction of Input signalGreater dynamic rangeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RAT

 8.9. Size:223K  inchange semiconductor
2sc2502.pdf

2SC2504
2SC2504

isc Silicon NPN Power Transistor 2SC2502DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedCollector-Emitter Saturation Voltage-: V = 0.7V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed , powerswitching in in

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: AC138-6 | AC192-8 | DTA124ESA | 2SC2467

 

 
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