2SC2505
Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2505
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60
W
Maximum Collector-Base Voltage |Vcb|: 500
V
Maximum Collector-Emitter Voltage |Vce|: 400
V
Maximum Emitter-Base Voltage |Veb|: 7
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 10
MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package:
TO3
2SC2505
Transistor Equivalent Substitute - Cross-Reference Search
2SC2505
Datasheet (PDF)
8.6. Size:210K lge
2sc2500 to-92l.pdf
2SC2500 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features7.8008.200 Strobe flash applications 0.6000.800 Medium power amplifier applications 0.3500.55013.80014.200Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.270 TYP2.4402.640Symbol Parameter Value Units0.000
8.7. Size:244K lge
2sc2500 to-92mod.pdf
2SC2500 TO-92MOD Transistor (NPN)TO-92MOD11. EMITTER 2 3 2. COLLECTOR 3. BASE 5.800Features 6.200 Strobe flash applications 8.4008.800 Medium power amplifier applications 0.9001.1000.4000.600 13.80014.2001.500 TYP2.900Dimensions in inches and (millimeters)3.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600Symbol Parameter Va
8.8. Size:239K inchange semiconductor
2sc2507.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2507 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 10A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are partic
8.9. Size:193K inchange semiconductor
2sc2501.pdf
isc Silicon NPN Power Transistors 2SC2501DESCRIPTIONWith TO-220 packagingReliable performance at higher powersAccurate reproduction of Input signalGreater dynamic rangeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RAT
8.10. Size:223K inchange semiconductor
2sc2502.pdf
isc Silicon NPN Power Transistor 2SC2502DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedCollector-Emitter Saturation Voltage-: V = 0.7V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed , powerswitching in in
Datasheet: 2SA1771
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