2SC2506 Datasheet and Replacement

   Type Designator: 2SC2506
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 500 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3

2SC2506 Substitution

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2SC2506 Datasheet (PDF)

..1. Size:361K 1
2sc2937 2sc3224 2sc3262 2sc3261 2sc3259 2sc2507 2sc2506 2sc2829 2sc2827 2sc2826.pdf pdf_icon

8.1. Size:180K toshiba
2sc2500.pdf pdf_icon

8.2. Size:135K mospec
2sc2502.pdf pdf_icon

AAA

8.3. Size:77K no
2sc2501.pdf pdf_icon

8.4. Size:287K no
2sc2504.pdf pdf_icon

8.5. Size:210K lge
2sc2500 to-92l.pdf pdf_icon

2SC2500 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.70015.100Features7.8008.200 Strobe flash applications 0.6000.800 Medium power amplifier applications 0.3500.55013.80014.200Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.270 TYP2.4402.640Symbol Parameter Value Units0.000

8.6. Size:244K lge
2sc2500 to-92mod.pdf pdf_icon

2SC2500 TO-92MOD Transistor (NPN)TO-92MOD11. EMITTER 2 3 2. COLLECTOR 3. BASE 5.800Features 6.200 Strobe flash applications 8.4008.800 Medium power amplifier applications 0.9001.1000.4000.600 13.80014.2001.500 TYP2.900Dimensions in inches and (millimeters)3.100MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600Symbol Parameter Va

8.7. Size:239K inchange semiconductor
2sc2507.pdf pdf_icon

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2507 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage- : VCE(sat)= 0.7V(Max.)@ IC= 10A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are partic

8.8. Size:193K inchange semiconductor
2sc2501.pdf pdf_icon

isc Silicon NPN Power Transistors 2SC2501DESCRIPTIONWith TO-220 packagingReliable performance at higher powersAccurate reproduction of Input signalGreater dynamic rangeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RAT

8.9. Size:223K inchange semiconductor
2sc2502.pdf pdf_icon

isc Silicon NPN Power Transistor 2SC2502DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Fast Switching SpeedCollector-Emitter Saturation Voltage-: V = 0.7V(Max.)@ I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in high-voltage, high-speed , powerswitching in in

Datasheet: 2SC2500A , 2SC2500B , 2SC2500C , 2SC2500D , 2SC2502 , 2SC2503 , 2SC2504 , 2SC2505 , C945 , 2SC2507 , 2SC2508 , 2SC2509 , 2SC251 , 2SC2510 , 2SC2511 , 2SC2512 , 2SC2516 .