2SC2506 Specs and Replacement
Type Designator: 2SC2506
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 10 MHz
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO3
- BJT ⓘ Cross-Reference Search
2SC2506 datasheet
8.5. Size:210K lge
2sc2500 to-92l.pdf 
2SC2500 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features 7.800 8.200 Strobe flash applications 0.600 0.800 Medium power amplifier applications 0.350 0.550 13.800 14.200 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) 1.270 TYP 2.440 2.640 Symbol Parameter Value Units 0.000... See More ⇒
8.6. Size:244K lge
2sc2500 to-92mod.pdf
2SC2500 TO-92MOD Transistor (NPN) TO-92MOD 1 1. EMITTER 2 3 2. COLLECTOR 3. BASE 5.800 Features 6.200 Strobe flash applications 8.400 8.800 Medium power amplifier applications 0.900 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.000 1.600 Symbol Parameter Va... See More ⇒
8.7. Size:239K inchange semiconductor
2sc2507.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2507 DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS)= 400V(Min) Fast Switching Speed Collector-Emitter Saturation Voltage- VCE(sat)= 0.7V(Max.)@ IC= 10A APPLICATIONS Designed for use in high-voltage, high-speed , power switching in inductive circuit , they are partic... See More ⇒
8.8. Size:193K inchange semiconductor
2sc2501.pdf
isc Silicon NPN Power Transistors 2SC2501 DESCRIPTION With TO-220 packaging Reliable performance at higher powers Accurate reproduction of Input signal Greater dynamic range Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators High frequency inverters General purpose power amplifiers ABSOLUTE MAXIMUM RAT... See More ⇒
8.9. Size:223K inchange semiconductor
2sc2502.pdf
isc Silicon NPN Power Transistor 2SC2502 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min) CEO(SUS) Fast Switching Speed Collector-Emitter Saturation Voltage- V = 0.7V(Max.)@ I = 3A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in high-voltage, high-speed , power switching in in... See More ⇒
Detailed specifications: 2SC2500A, 2SC2500B, 2SC2500C, 2SC2500D, 2SC2502, 2SC2503, 2SC2504, 2SC2505, 2N3904, 2SC2507, 2SC2508, 2SC2509, 2SC251, 2SC2510, 2SC2511, 2SC2512, 2SC2516
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