2SC251 Specs and Replacement

Type Designator: 2SC251

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 450 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO72

 2SC251 Substitution

- BJT ⓘ Cross-Reference Search

 

2SC251 datasheet

 0.1. Size:237K  1

2sc2519.pdf pdf_icon

2SC251

... See More ⇒

 0.2. Size:165K  toshiba

2sc2510.pdf pdf_icon

2SC251

2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm Specified 28V, 28MHz Characteristics Output Power Po = 150W (Min.) PEP Power Gain Gp = 12.2dB (Min.) Collector Efficiency C = 35% (Min.) Intermodulation Distortion IMD = -30dB (Max.) MAXIMUM RATINGS (T... See More ⇒

 0.3. Size:170K  nec

2sc2518.pdf pdf_icon

2SC251

... See More ⇒

 0.4. Size:132K  nec

2sc2517.pdf pdf_icon

2SC251

DATA SHEET SILICON POWER TRANSISTOR 2SC2517 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT mm) speed switching. This transistor is ideal for use in drivers such as switching regulators, DC/DC converters, high-frequency power amplifiers. FEATURES ow collector saturation voltage ... See More ⇒

Detailed specifications: 2SC2502, 2SC2503, 2SC2504, 2SC2505, 2SC2506, 2SC2507, 2SC2508, 2SC2509, C1815, 2SC2510, 2SC2511, 2SC2512, 2SC2516, 2SC2516A, 2SC2517, 2SC2517O, 2SC2517R

Keywords - 2SC251 pdf specs

 2SC251 cross reference

 2SC251 equivalent finder

 2SC251 pdf lookup

 2SC251 substitution

 2SC251 replacement