All Transistors. 2SC2510 Datasheet

 

2SC2510 Transistor. Datasheet pdf. Equivalent

Type Designator: 2SC2510

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 250 W

Maximum Collector-Base Voltage |Vcb|: 55 V

Maximum Collector-Emitter Voltage |Vce|: 35 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 175 °C

Collector Capacitance (Cc): 450 pF

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: MD34

2SC2510 Transistor Equivalent Substitute - Cross-Reference Search

2SC2510 Datasheet PDF:

1.1. 2sc2510.pdf Size:165K _toshiba

2SC2510
2SC2510

2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150W (Min.) PEP Power Gain : Gp = 12.2dB (Min.) Collector Efficiency : ?C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (Tc =

4.1. 2sc2517.pdf Size:132K _nec

2SC2510
2SC2510

DATA SHEET SILICON POWER TRANSISTOR 2SC2517 NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm) speed switching. This transistor is ideal for use in drivers such as switching regulators, DC/DC converters, high-frequency power amplifiers. FEATURES ow collector saturation voltage: VCE(s

4.2. 2sc2518.pdf Size:170K _nec

2SC2510
2SC2510

4.3. 2sc2512.pdf Size:33K _hitachi

2SC2510
2SC2510

2SC2512 Silicon NPN Triple Diffused Application VHF Amplifier VHF TV Tuner, Mixer Outline TO-92 (2) 1. Base 2. Emitter 3. Collector 3 2 1 2SC2512 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3V Collector current IC 50 mA Collector power dissipation PC 30

4.4. 2sc2517.pdf Size:99K _savantic

2SC2510
2SC2510

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION With TO-220C package Low collector saturation voltage Wide area of safe operation APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratin

4.5. 2sc2517.pdf Size:126K _inchange_semiconductor

2SC2510
2SC2510

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION Ў¤ With TO-220C package Ў¤ Low collector saturation voltage Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Switching regulators Ў¤ DC-DC converters Ў¤ High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolu

4.6. 2sc2518.pdf Size:280K _inchange_semiconductor

2SC2510
2SC2510

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2518 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V(Min) ·Low Collector Saturation Voltage ·High Speed Switching APPLICATIONS ·Designed for switching regulator, DC-DC converter and ultrasonic applicance applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PAR

4.7. 2sc2516.pdf Size:126K _inchange_semiconductor

2SC2510
2SC2510

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2516 DESCRIPTION Ў¤ With TO-220C package Ў¤ Low collector saturation voltage Ў¤ Wide area of safe operation APPLICATIONS Ў¤ Switching regulators Ў¤ DC-DC converters Ў¤ High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Ў¤ Absolu

Datasheet: 2SC2503 , 2SC2504 , 2SC2505 , 2SC2506 , 2SC2507 , 2SC2508 , 2SC2509 , 2SC251 , BC337 , 2SC2511 , 2SC2512 , 2SC2516 , 2SC2516A , 2SC2517 , 2SC2517O , 2SC2517R , 2SC2517Y .

 


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