All Transistors. 2SC2511 Datasheet

 

2SC2511 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC2511
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.32 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 75 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 41
   Noise Figure, dB: -
   Package: TO92

 2SC2511 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC2511 Datasheet (PDF)

 8.1. Size:237K  1
2sc2519.pdf

2SC2511
2SC2511

 8.2. Size:165K  toshiba
2sc2510.pdf

2SC2511
2SC2511

2SC2510 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) Unit in mm Specified 28V, 28MHz Characteristics Output Power : Po = 150W (Min.) PEP Power Gain : Gp = 12.2dB (Min.) Collector Efficiency : C = 35% (Min.) Intermodulation Distortion: IMD = -30dB (Max.) MAXIMUM RATINGS (T

 8.3. Size:170K  nec
2sc2518.pdf

2SC2511
2SC2511

 8.4. Size:132K  nec
2sc2517.pdf

2SC2511
2SC2511

DATA SHEETSILICON POWER TRANSISTOR2SC2517NPN SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SC2517 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching. This transistor is ideal for use in drivers such asswitching regulators, DC/DC converters, high-frequency poweramplifiers.FEATURES ow collector saturation voltage:

 8.5. Size:33K  hitachi
2sc2512.pdf

2SC2511
2SC2511

2SC2512Silicon NPN Triple DiffusedApplication VHF Amplifier VHF TV Tuner, MixerOutlineTO-92 (2)1. Base2. Emitter3. Collector3212SC2512Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 3VCollector current IC 50 mACollector power dissipati

 8.6. Size:99K  savantic
2sc2517.pdf

2SC2511
2SC2511

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2517 DESCRIPTION With TO-220C package Low collector saturation voltage Wide area of safe operation APPLICATIONS Switching regulators DC-DC converters High frequency power amplifiers PINNING PIN DESCRIPTION1 Base Collector;connected to 2mounting base 3 Emitter Absolute maxi

 8.7. Size:339K  hgsemi
2sc2510a.pdf

2SC2511

HG RF POWER TRANSISTOR2SC2510ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTOR Specified 28V, 28MHz Characteristics Output Power : Po = 150WPEP (Min.) Power Gain : Gp = 12.2dB (Min.) Collector Efficiency = 35% (Min.) : C_30dB Intermodulation Distortion : IMD = (Max.) ABSOLUTE MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBOL RATING UNIT Collecto

 8.8. Size:176K  cn sptech
2sc2517m 2sc2517l 2sc2517k.pdf

2SC2511
2SC2511

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2517DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 8.9. Size:221K  inchange semiconductor
2sc2518.pdf

2SC2511
2SC2511

isc Silicon NPN Power Transistor 2SC2518DESCRIPTIONHigh Collector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Low Collector Saturation VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andultrasonic applicance applications.ABSOLUTE MAXIM

 8.10. Size:222K  inchange semiconductor
2sc2517.pdf

2SC2511
2SC2511

isc Silicon NPN Power Transistor 2SC2517DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIM

 8.11. Size:222K  inchange semiconductor
2sc2516.pdf

2SC2511
2SC2511

isc Silicon NPN Power Transistor 2SC2516DESCRIPTIONLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-speed switching, and is ideal for useas a driver in devices such as switching reglators,DC/DCconverters, and high frequency power amplifiers.ABSOLUTE MAXIMUM RATINGS(T =25)a

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

 

 
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