All Transistors. 2SC252 Datasheet

 

2SC252 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SC252
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 15 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.03 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 450 MHz
   Collector Capacitance (Cc): 2 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO72

 2SC252 Transistor Equivalent Substitute - Cross-Reference Search

   

2SC252 Datasheet (PDF)

 0.1. Size:194K  fuji
2sc2527.pdf

2SC252

 0.2. Size:213K  inchange semiconductor
2sc2523.pdf

2SC252
2SC252

isc Silicon NPN Power Transistor 2SC2523DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SA1073Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulatorsD

 0.3. Size:224K  inchange semiconductor
2sc2526.pdf

2SC252
2SC252

isc Silicon NPN Power Transistor 2SC2526DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1076Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

 0.4. Size:194K  inchange semiconductor
2sc2528.pdf

2SC252
2SC252

isc Silicon NPN Power Transistor 2SC2528DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 0.7ACE(sat) CComplement to Type 2SA1078Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifier,Audio power amplifierDirv

 0.5. Size:189K  inchange semiconductor
2sc2525.pdf

2SC252
2SC252

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2525DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS

 0.6. Size:207K  inchange semiconductor
2sc2522.pdf

2SC252
2SC252

isc Silicon NPN Power Transistor 2SC2522DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SA1072Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulatorsD

 0.7. Size:193K  inchange semiconductor
2sc2527.pdf

2SC252
2SC252

isc Silicon NPN Power Transistor 2SC2527DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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