2SC2522A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2522A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 180 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO3
2SC2522A Transistor Equivalent Substitute - Cross-Reference Search
2SC2522A Datasheet (PDF)
2sc2522.pdf
isc Silicon NPN Power Transistor 2SC2522DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SA1072Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulatorsD
2sc2523.pdf
isc Silicon NPN Power Transistor 2SC2523DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOFast Switching SpeedWide Area of Safe OperationComplement to Type 2SA1073Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifierAudio power amplifiersSwitching regulatorsD
2sc2526.pdf
isc Silicon NPN Power Transistor 2SC2526DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1076Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sc2528.pdf
isc Silicon NPN Power Transistor 2SC2528DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOLow Collector-Emitter Saturation Voltage-: V = 1.0V(Max) @I = 0.7ACE(sat) CComplement to Type 2SA1078Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency power amplifier,Audio power amplifierDirv
2sc2525.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2525DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 120V(Min)(BR)CEOGood Linearity of hFE100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aS
2sc2527.pdf
isc Silicon NPN Power Transistor 2SC2527DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
