2SC2524 Specs and Replacement
Type Designator: 2SC2524
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 120 W
Maximum Collector-Base Voltage |Vcb|: 160 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 180 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: TO3
2SC2524 Substitution
- BJT ⓘ Cross-Reference Search
2SC2524 datasheet
isc Silicon NPN Power Transistor 2SC2523 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Complement to Type 2SA1073 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier Audio power amplifiers Switching regulators D... See More ⇒
isc Silicon NPN Power Transistor 2SC2526 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SA1076 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL... See More ⇒
isc Silicon NPN Power Transistor 2SC2528 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 120V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 1.0V(Max) @I = 0.7A CE(sat) C Complement to Type 2SA1078 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High frequency power amplifier, Audio power amplifier Dirv... See More ⇒
Detailed specifications: 2SC2518R, 2SC2518Y, 2SC2519, 2SC251A, 2SC252, 2SC2522, 2SC2522A, 2SC2523, A1941, 2SC2525, 2SC2526, 2SC2527, 2SC2528, 2SC2529, 2SC253, 2SC2530, 2SC2531
Keywords - 2SC2524 pdf specs
2SC2524 cross reference
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History: FQ3467
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