2SC2533 Specs and Replacement
Type Designator: 2SC2533
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 2 A
Max. Operating Junction Temperature (Tj): 140 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
2SC2533 Substitution
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2SC2533 datasheet
2SC2532 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2532 Audio Frequency Amplifier Applications Unit mm Driver Stage for LED Lamp Applications Temperature Compensation Applications High hFE hFE (1) = 5000 (min) (IC = 10 mA) h (2) = 10000 (min) (IC = 100 mA) FE Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base ... See More ⇒
SMD Type Transistors NPN Transistors 2SC2532 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=300mA 1 2 Collector Emitter Voltage VCEO=40V +0.1 0.95-0.1 0.1+0.05 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 Collect... See More ⇒
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2534 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 150(V)(Min.) (BR)CEO 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed high voltage switching application Switching regulator applications High speed DC-DC converter applicatio... See More ⇒
Detailed specifications: 2SC2526, 2SC2527, 2SC2528, 2SC2529, 2SC253, 2SC2530, 2SC2531, 2SC2532, S8550, 2SC2534, 2SC2535, 2SC2536, 2SC2537, 2SC2538, 2SC2539, 2SC254, 2SC2540
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