2SC2556A Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2556A
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.2 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 20 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: TO126
2SC2556A Transistor Equivalent Substitute - Cross-Reference Search
2SC2556A Datasheet (PDF)
2sc2556 2sc2556a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2556 2SC2556A DESCRIPTION With TO-126 package High VCBO Low collector saturation voltage High transition frequency APPLICATIONS Audio frequency output amplifier PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25)
2sc2556.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2556DESCRIPTIONHigh transistor frequencyLow Saturation VoltageHigh VCBO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency output amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base V
2sc2551.pdf
2SC2551 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 Industrial Applications Hight Voltage Control Applications Unit: mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage: VCBO = 300 V, V = 300 V CEO Low saturation voltage: V = 0.5 V (max) CE (sat) Small collector output capacita
2sc2551.pdf
2SC2551 0.1 A , 300 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES TO-92 High Voltage G H Low Saturation Voltage Small Collector Output Capacitance Complementary to 2SA1091 JEmitterA DCollectorBase BCLASSIFICATION OF hFE(1) KMillimet
2sc2551.pdf
2SC2551(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High voltage Low saturation voltage Small collector output capacitance Complementary to 2SA1091 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 300 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Vo
2sc2555.pdf
isc Silicon NPN Power Transistor 2SC2555DESCRIPTIONHigh Collector-Emitter Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSSwitching regulator and high voltage switchingapplicationsHigh speed DC-DC converter applicationsMinimum Lot-to-Lot variations for robust device
2sc2552.pdf
isc Silicon NPN Power Transistor 2SC2552DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
2sc2553.pdf
isc Silicon NPN Power Transistor 2SC2553DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulator and high voltage switching applications.High speed DC-DC converter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
