2SC2559 Specs and Replacement

Type Designator: 2SC2559

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 17 W

Maximum Collector-Base Voltage |Vcb|: 35 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Transition Frequency (ft): 430 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: XM24

 2SC2559 Substitution

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2SC2559 datasheet

 8.1. Size:185K  toshiba

2sc2555.pdf pdf_icon

2SC2559

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 8.2. Size:163K  toshiba

2sc2552.pdf pdf_icon

2SC2559

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 8.3. Size:330K  toshiba

2sc2551.pdf pdf_icon

2SC2559

2SC2551 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2551 Industrial Applications Hight Voltage Control Applications Unit mm Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications High voltage VCBO = 300 V, V = 300 V CEO Low saturation voltage V = 0.5 V (max) CE (sat) Small collector output capacita... See More ⇒

 8.4. Size:144K  mospec

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2SC2559

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Detailed specifications: 2SC2551R, 2SC2552, 2SC2553, 2SC2555, 2SC2556, 2SC2556A, 2SC2557, 2SC2558, D209L, 2SC256, 2SC2560, 2SC2561, 2SC2562, 2SC2562O, 2SC2562R, 2SC2563, 2SC2564

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