2SC2562 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2562
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 60 MHz
Collector Capacitance (Cc): 80 pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: TO220
2SC2562 Transistor Equivalent Substitute - Cross-Reference Search
2SC2562 Datasheet (PDF)
2sc2562.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2562 DESCRIPTION With TO-220 package Complement to type 2SA1012 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 EmitterAbsolute
2sc2562.pdf
isc Silicon NPN Power Transistor 2SC2562DESCRIPTIONLow Collector Saturation Voltage:V = 0.4(V)(Max)@I = 3ACE(sat) CHigh Switching SpeedComplement to Type 2SA1012Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
2sc2564.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2564 DESCRIPTION With MT-200 package Complement to type 2SA1094 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings
2sc2565.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2565 DESCRIPTION With MT-200 package Complement to type 2SA1095 High transition frequency APPLICATIONS For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings
2sc2564.pdf
isc Silicon NPN Power Transistor 2SC2564DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1094Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sc2563.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2563DESCRIPTIONHigh power dissipationLow Saturation VoltageHigh VCBO100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAudio frequency output amplifier and general purposeapplicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
2sc2565.pdf
isc Silicon NPN Power Transistor 2SC2565DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = 160V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SA1095Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
