2SC259 Datasheet and Replacement
Type Designator: 2SC259
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.8 W
Maximum Collector-Base Voltage |Vcb|: 90 V
Maximum Collector-Emitter Voltage |Vce|: 70 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 100 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO5
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2SC259 Datasheet (PDF)
2sc2590.pdf

Power Transistors2SC2590Silicon NPN epitaxial planar typeFor low-frequency power amplificationUnit: mm8.0+0.50.13.20.2 3.160.1 Features Excellent collector current IC characteristics of forward currenttransfer ratio hFE High transition frequency fT TO-126B package which requires no insulation plate for installa-tion to the heat sink Absolute
2sc2591 2sc2592.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseFig.1 simplified outline (TO-
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
History: 2SB1132-R | DRA5114E | BC856A | 3CA42A | 2N2906AUBC | AC126 | ECG381
Keywords - 2SC259 transistor datasheet
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History: 2SB1132-R | DRA5114E | BC856A | 3CA42A | 2N2906AUBC | AC126 | ECG381



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