2SC2591 Specs and Replacement
Type Designator: 2SC2591
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 20 W
Maximum Collector-Base Voltage |Vcb|: 150 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN: 65
Noise Figure, dB: -
Package: TO220
- BJT ⓘ Cross-Reference Search
2SC2591 datasheet
..2. Size:114K jmnic
2sc2591 2sc2592.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-... See More ⇒
..3. Size:166K inchange semiconductor
2sc2591 2sc2592.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 DESCRIPTION With TO-220 package Complement to type 2SA1111/1112 Good linearity of hFE High VCEO APPLICATIONS For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-22... See More ⇒
8.2. Size:80K panasonic
2sc2590.pdf
Power Transistors 2SC2590 Silicon NPN epitaxial planar type For low-frequency power amplification Unit mm 8.0+0.5 0.1 3.2 0.2 3.16 0.1 Features Excellent collector current IC characteristics of forward current transfer ratio hFE High transition frequency fT TO-126B package which requires no insulation plate for installa- tion to the heat sink Absolute... See More ⇒
8.3. Size:181K jmnic
2sc2590.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC2590 DESCRIPTION With TO-126 package Complement to type 2SA1110 Excellent current IC characteristics of forward current transfer ratio hFE vs. collector High transition frequency fT Optimum for the driver stage of a 40 W to 60 W output amplifier APPLICATIONS For low-frequency power amplification ... See More ⇒
8.4. Size:191K inchange semiconductor
2sc2594.pdf
isc Silicon NPN Power Transistor 2SC2594 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 20V(Min) (BR)CEO Good Linearity of h FE Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF power amplifier For electronic flash unit Converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR... See More ⇒
8.5. Size:187K inchange semiconductor
2sc2592.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistors 2SC2592 DESCRIPTION Silicon NPN epitaxial planar type High transition frequency Complement to Type 2SA1112 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AF Driver,High power Amplifier complementary Pairs with 2SA1112. ABSOLUTE MAXIMUM RATINGS(T... See More ⇒
8.6. Size:198K inchange semiconductor
2sc2590.pdf
INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC2590 DESCRIPTION Silicon NPN epitaxial planar type High transition frequency Complementary to 2SA1110 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For low-frequency power amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V... See More ⇒
Detailed specifications: 2SC2586, 2SC2587, 2SC2587A, 2SC2588, 2SC2588A, 2SC2589, 2SC259, 2SC2590, C1815, 2SC2592, 2SC2593, 2SC2594, 2SC2595, 2SC2596, 2SC2597, 2SC2598, 2SC2599
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