All Transistors. 2SC2606 Datasheet

 

2SC2606 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SC2606

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.95 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Emitter-Base Voltage |Veb|: 8 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 120 °C

Transition Frequency (ft): 15 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: TO220

2SC2606 Transistor Equivalent Substitute - Cross-Reference Search

 

2SC2606 Datasheet (PDF)

4.1. 2sc2603.pdf Size:74K _microelectronics

2SC2606

4.2. 2sc2608.pdf Size:127K _inchange_semiconductor

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2SC2606

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2608 DESCRIPTION ·With TO-3 package ·Complement to type 2SA1117 ·High power dissipation APPLICATIONS ·For power amplifier applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER

5.1. 2sc2655l-o.pdf Size:385K _update

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2SC2606

MCC Micro Commercial Components TM 2SC2655L-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655L-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Halogen free available upon request by adding suffix "-HF" • Collector of 0.9Watts of Power Dissipation. NPN • Collector-current 2.0A Plastic-Encapsulate • Operating and storage junction temper

5.2. 2sc2668-o.pdf Size:651K _update

2SC2606
2SC2606

M C C TM 2SC2668-R Micro Commercial Components Micro Commercial Components 2SC2668-O 20736 Marilla Street Chatsworth CA 91311 2SC2668-Y Phone: (818) 701-4933 Fax: (818) 701-4939 NPN Features • Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-Encapsulate Compliant. See ordering information) Transistors • Epoxy meets UL 94 V-0 flammability rating • Moistu

5.3. 2sc2668-y.pdf Size:651K _update

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M C C TM 2SC2668-R Micro Commercial Components Micro Commercial Components 2SC2668-O 20736 Marilla Street Chatsworth CA 91311 2SC2668-Y Phone: (818) 701-4933 Fax: (818) 701-4939 NPN Features • Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-Encapsulate Compliant. See ordering information) Transistors • Epoxy meets UL 94 V-0 flammability rating • Moistu

5.4. 2sc2625b.pdf Size:238K _update

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RoHS 2SC2625B RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 10A/400V/80W 15.6±0.4 4.8±0.2 9.6 2.0±0.1 Φ3.2±0,1 TO-3P(B) 2 3 FEATURES +0.2 +0.2 0.65 1.05 -0.1 -0.1 High-speed switching High collector to base voltage VCBO 5.45±0.1 5.45±0.1 1.4 Satisfactory linearity of foward cur

5.5. 2sc2655-y.pdf Size:405K _update

2SC2606
2SC2606

MCC Micro Commercial Components TM 2SC2655-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Halogen free available upon request by adding suffix "-HF" • Collector of 0.9Watts of Power Dissipation. NPN • Collector-current 2.0A Plastic-Encapsulate • Operating and storage junction temperat

5.6. 2sc2655-o.pdf Size:405K _update

2SC2606
2SC2606

MCC Micro Commercial Components TM 2SC2655-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Halogen free available upon request by adding suffix "-HF" • Collector of 0.9Watts of Power Dissipation. NPN • Collector-current 2.0A Plastic-Encapsulate • Operating and storage junction temperat

5.7. 2sc2655l-y.pdf Size:385K _update

2SC2606
2SC2606

MCC Micro Commercial Components TM 2SC2655L-O 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SC2655L-Y Phone: (818) 701-4933 Fax: (818) 701-4939 Features • Halogen free available upon request by adding suffix "-HF" • Collector of 0.9Watts of Power Dissipation. NPN • Collector-current 2.0A Plastic-Encapsulate • Operating and storage junction temper

5.8. 2sc2668-r.pdf Size:651K _update

2SC2606
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M C C TM 2SC2668-R Micro Commercial Components Micro Commercial Components 2SC2668-O 20736 Marilla Street Chatsworth CA 91311 2SC2668-Y Phone: (818) 701-4933 Fax: (818) 701-4939 NPN Features • Lead Free Finish/Rohs Compliant ("P"Suffix designates Plastic-Encapsulate Compliant. See ordering information) Transistors • Epoxy meets UL 94 V-0 flammability rating • Moistu

5.9. 2sc2640.pdf Size:117K _toshiba

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5.10. 2sc2643.pdf Size:119K _toshiba

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5.11. 2sc2639.pdf Size:127K _toshiba

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5.12. 2sc2670.pdf Size:349K _toshiba

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2SC2670 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC2670 High Frequency Amplifier Applications Unit: mm AM High Frequency Amplifier Applications AM Frequency Converter Applications Low noise figure: NF = 3.5dB (max) (f = 1 MHz) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage

5.13. 2sc2638.pdf Size:128K _toshiba

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5.14. 2sc2669.pdf Size:473K _toshiba

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2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 35 V Collector-emitter voltage VCEO 30 V

5.15. 2sc2655.pdf Size:148K _toshiba

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2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 ?s (typ.) Complementary to 2SA1020. Absolute Maximum Ratings (Ta

5.16. 2sc2642.pdf Size:118K _toshiba

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5.17. 2sc2641.pdf Size:119K _toshiba

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5.18. 2sc2668.pdf Size:502K _toshiba

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2SC2668 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2668 High Frequency Amplifier Applications Unit: mm FM, RF, IF Amplifier Applications Small reverse transfer capacitance: Cre = 0.70 pF (typ.) Low noise figure: NF = 2.5dB (typ.) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emi

5.19. 2sc2644.pdf Size:281K _toshiba

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2SC2644 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2644 VHF~UHF Band Wideband Amplifier Applications Unit: mm High gain Low IMD fT = 4 GHz (typ.) Maximum Ratings (Ta = = 25C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 12 V Emitter-base voltage VEBO 3.0 V Collector current IC 120 mA Emitter cu

5.20. r07ds0273ej 2sc2618-1.pdf Size:85K _renesas

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Preliminary Datasheet R07DS0273EJ0300 2SC2618 (Previous: REJ03G0702-0200) Rev.3.00 Silicon NPN Epitaxial Mar 28, 2011 Application ? Low frequency amplifier ? Complementary pair with 2SA1121 Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 1. Emitter 3 2. Base 3. Collector 1 2 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to b

5.21. 2sc2654.pdf Size:96K _nec

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DATA SHEET SILICON POWER TRANSISTOR 2SC2654 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING (UNIT: mm) Large current capacitance in small dimension: IC(DC) = 7 A Low collector saturation voltage: VCE(sat) = 0.3 V MAX. (IC = 3.0 A) Ideal for use in a lamp driver Complementary transistor: 2SA1129 ABSOLUTE MAXIMUM

5.22. 2sc2682.pdf Size:64K _nec

2SC2606

5.23. 2sc2688.pdf Size:57K _nec

2SC2606
2SC2606

5.24. 2sc2673.pdf Size:120K _rohm

2SC2606

5.25. 2sc2636.pdf Size:126K _panasonic

2SC2606
2SC2606

5.26. 2sc2632.pdf Size:34K _panasonic

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Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SA1124 5.9 0.2 4.9 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Rat

5.27. 2sc2671 e.pdf Size:41K _panasonic

2SC2606
2SC2606

Transistor 2SC2671(F) Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0 0.2 4.0 0.2 Features Low noise figure NF. High gain. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 15 V 1.27 1.27 Collector to emitter voltage VCER* 14 V Emitter to

5.28. 2sc2671.pdf Size:37K _panasonic

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Transistor 2SC2671(F) Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm 5.0 0.2 4.0 0.2 Features Low noise figure NF. High gain. High transition frequency fT. Absolute Maximum Ratings (Ta=25?C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 15 V 1.27 1.27 Collector to emitter voltage VCER* 14 V Emitter to

5.29. 2sc2634 e.pdf Size:42K _panasonic

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2SC2606

Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SA1127 5.0 0.2 4.0 0.2 Features Low noise voltage NV. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector to emitter v

5.30. 2sc2647.pdf Size:57K _panasonic

2SC2606
2SC2606

Transistor 2SC2647 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum R

5.31. 2sc2634.pdf Size:38K _panasonic

2SC2606
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Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit: mm Complementary to 2SA1127 5.0 0.2 4.0 0.2 Features Low noise voltage NV. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector to emitter v

5.32. 2sc2631.pdf Size:34K _panasonic

2SC2606
2SC2606

Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SA1123 5.0 0.2 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2

5.33. 2sc2636 e.pdf Size:59K _panasonic

2SC2606
2SC2606

Transistor 2SC2636 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25?C) 0.55 0.1 0.45 0.05 Parameter Symbol

5.34. 2sc2631 e.pdf Size:38K _panasonic

2SC2606
2SC2606

Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SA1123 5.0 0.2 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Ratings Unit +0.2 +0.2

5.35. 2sc2647 e.pdf Size:61K _panasonic

2SC2606
2SC2606

Transistor 2SC2647 Silicon NPN epitaxial planer type For high-frequency amplification Unit: mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 R0.9 Features Optimum for RF amplification, oscillation, mixing, and IF of FM/ AM radios. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 0.55 0.1 0.45 0.05 Absolute Maximum R

5.36. 2sc2632 e.pdf Size:38K _panasonic

2SC2606
2SC2606

Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit: mm Complementary to 2SA1124 5.9 0.2 4.9 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25?C) Parameter Symbol Rat

5.37. 2sc2655.pdf Size:254K _utc

2SC2606
2SC2606

UNISONIC TECHNOLOGIES CO., LTD 2SC2655 NPN SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS POWER SWITCHING APPLICATIONS FEATURES * Low saturation voltage: VCE(SAT)= 0.5V (Max.) * High speed switching time: TSTG=1.0?s (Typ.) ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SC2655L-x-AE3-R 2SC2655G-x-AE3-R SOT-23 E B C Tape

5.38. 2sc2688.pdf Size:256K _utc

2SC2606
2SC2606

UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. (E-B reverse bias, C=2300pF) * Low Cre, High fT Cre ?3.0 pF (VCB=30V) fT ?50MHz (VCE=30V, IE=-10mA) ORDERING INFORMATION Ordering

5.39. 2sc2656.pdf Size:124K _fuji

2SC2606
2SC2606

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.40. 2sc2626.pdf Size:101K _fuji

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Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com

5.41. 2sc2620.pdf Size:24K _hitachi

2SC2606
2SC2606

2SC2620 Silicon NPN Epitaxial Planar Application VHF amplifier, Local oscillator Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2620 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC 100 mW Junct

5.42. 2sc2612.pdf Size:39K _hitachi

2SC2606
2SC2606

2SC2612 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline TO-220AB 1. Base 2. Collector (Flange) 1 3. Emitter 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 500 V Collector to emitter voltage VCEO 400 V Emitter to base voltage VEBO 7V Collector current IC 3A Collector peak current I

5.43. 2sc2611.pdf Size:30K _hitachi

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2SC2606

2SC2611 Silicon NPN Triple Diffused Application High voltage amplifier TV VIDEO output Outline TO-126 MOD 1. Emitter 2. Collector 3. Base 1 2 3 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 1.25 W

5.44. 2sc2613.pdf Size:49K _hitachi

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To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (

5.45. 2sc2618.pdf Size:24K _hitachi

2SC2606
2SC2606

2SC2618 Silicon NPN Epitaxial Application Low frequency amplifier Complementary pair with 2SA1121 Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2618 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 4V Collector current IC 500 mA Collector power dissi

5.46. 2sc2610.pdf Size:29K _hitachi

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2SC2610 Silicon NPN Triple Diffused Application High voltage amplifier TV Video output Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2610 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipati

5.47. 2sc2619.pdf Size:24K _hitachi

2SC2606
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2SC2619 Silicon NPN Epitaxial Application High frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2619 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 30 V Emitter to base voltage VEBO 5V Collector current IC 100 mA Collector power dissipation PC 150 mW Junction temperatu

5.48. 2sc2694.pdf Size:136K _mitsubishi

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5.49. 2sc2629.pdf Size:135K _mitsubishi

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5.50. 2sc2628.pdf Size:138K _mitsubishi

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5.51. 2sc2630.pdf Size:135K _mitsubishi

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5.52. 2sc2627.pdf Size:135K _mitsubishi

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5.53. 2sc2695.pdf Size:186K _mitsubishi

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5.54. 2sc2625.pdf Size:129K _mospec

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A A A

5.55. 2sc2681.pdf Size:32K _no

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5.56. 2sa1141 2sc2681.pdf Size:32K _no

2SC2606

5.57. 2sc2616.pdf Size:38K _no

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5.58. 2sc2611 3da2611.pdf Size:339K _no

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2SC2611(3DA2611) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于高电压增幅,电视机的视频输出。 &[页码]Purpose: High voltage amplifier, TV video output. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 100 mA C P 1.25 W C T 150 ℃ j T -55~150 ℃

5.59. 2sc2621 3da2621.pdf Size:231K _no

2SC2606
2SC2606

2SC2621(3DA2621) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于彩电色度信号输出。 Purpose: Color TV chroma output applications. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 300 V CBO V 300 V CEO V 6.5 V EBO I 200 mA C I 700 mA CP P (Ta=25℃) 1.2 W C P (Tc=25℃) 10 W C T 150 ℃

5.60. 2sa1220a 2sc2690a.pdf Size:35K _no

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5.61. 2sc2614.pdf Size:41K _no

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5.62. 2sc2688 3da2688.pdf Size:157K _no

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2SC2688(3DA2688) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于彩电色度输出电路。 Purpose: Color TV chroma output circuits. 特点:C 小,f 高。 re T Features: Low C , high f . re T 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 300 V CBO V 300 V CEO V 5.0 V EBO I 200 mA C P (Ta=25℃)

5.63. 2sc2654 3da2654.pdf Size:254K _no

2SC2606
2SC2606

2SC2654(3DA2654) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低频功率放大和中速开关。 Purpose: For low-frequency power amplifiers and mid-speed switching. 特点:大电流,低饱和,与 2SA1129(3CA1129)互补。 Features: Large current capacity with small package, low collector saturation voltage, pair with 2SA1129(3CA1129). 极限参数/Absolute

5.64. 2sc2655.pdf Size:212K _secos

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2SC2606

2SC2655 2A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES ? Low saturation voltage:VCE(sat)=0.5V(Max)(IC=1A) A D ? High speed switching time:tstg=1?s(Typ.) B ? Complementary to 2SA1020 K E F CLASSIFICATION OF hFE (1) C Product-Rank 2SC2655-O 2SC2655-Y Ran

5.65. 2sc2668.pdf Size:134K _secos

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2SC2606

2SC2668 0.02A , 40V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92S Small Reverse Transfer Capacitance. Low Noise Figure. Millimeter REF. Min. Max. A 3.90 4.10 B 3.05 3.25 CLASSIFICATION OF hFE C 1.42 1.62 D 15.1 15.5 Product-Rank 2SC2668-R 2SC2668-O 2SC2668

5.66. 2sc2681.pdf Size:128K _inchange_semiconductor

2SC2606
2SC2606

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2681 DESCRIPTION Ў¤ With TO-3PFa package Ў¤ Complement to type 2SA1141 Ў¤ High transition frequency APPLICATIONS Ў¤ Audio frequency power amplifier Ў¤ High frequency power amplifier PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VEBO I

5.67. 2sc2612.pdf Size:151K _inchange_semiconductor

2SC2606
2SC2606

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2612 DESCRIPTION Ў¤ With TO-220 package Ў¤ High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS Ў¤ For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL

5.68. 2sc2611.pdf Size:113K _inchange_semiconductor

2SC2606
2SC2606

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2611 DESCRIPTION ·With TO-126 package ·High breakdown voltage APPLICATIONS ·For high voltage amplifier TV video output applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base ABSOLUTE MAXIMUM RATINGS(TC=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO

5.69. 2sc2657.pdf Size:229K _inchange_semiconductor

2SC2606
2SC2606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2657 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Volt

5.70. 2sc2656.pdf Size:230K _inchange_semiconductor

2SC2606
2SC2606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2656 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·DC-DC converter ·Solid state relay ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALU

5.71. 2sc2624.pdf Size:264K _inchange_semiconductor

2SC2606
2SC2606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2624 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Switching regulators ·Ultrasonic generators ·High frequency inverters ·General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL P

5.72. 2sc2613.pdf Size:145K _inchange_semiconductor

2SC2606
2SC2606

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2613 DESCRIPTION Ў¤ With TO-220 package Ў¤ High collector breakdown voltage : VCEO=400V(Min) APPLICATIONS Ў¤ For high voltage ,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL

5.73. 2sc2616.pdf Size:234K _inchange_semiconductor

2SC2606
2SC2606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2616 DESCRIPTION ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min) ·High Switching Speed APPLICATIONS ·Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500

5.74. 2sc2658.pdf Size:229K _inchange_semiconductor

2SC2606
2SC2606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2658 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Volt

5.75. 2sc2660 2sc2660a.pdf Size:124K _inchange_semiconductor

2SC2606
2SC2606

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2660 2SC2660A DESCRIPTION Ў¤ With TO-220 package Ў¤ Complement to type 2SA1133/1133A Ў¤ High VCEO Ў¤ Large PC APPLICATIONS Ў¤ Power amplifier applications Ў¤ TV vertical deflection applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum rat

5.76. 2sc2659.pdf Size:226K _inchange_semiconductor

2SC2606
2SC2606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2659 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 500V (Min) ·High Switching Speed APPLICATIONS ·Designed for high speed power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 800 V VCEO Collector-Emitter Volt

5.77. 2sc2654.pdf Size:276K _inchange_semiconductor

2SC2606
2SC2606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2654 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage :VCE(sat)= 0.3(V)(Max)@IC= 3A ·Complement to Type 2SA1129 APPLICATIONS ·Designed for low-frequency power amplifiers and mid-speed switching applications. ·Ideal for use in a lamp driver. ABSOLUTE MAXIMUM

5.78. 2sc2625.pdf Size:189K _inchange_semiconductor

2SC2606
2SC2606

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2625 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage,high speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESC

5.79. 2sc2682.pdf Size:121K _inchange_semiconductor

2SC2606
2SC2606

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2682 DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA1142 APPLICATIONS Ў¤ Audio frequency power amplifier; high frequency power amplifier applications PINNING PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO VE

5.80. 2sc2615.pdf Size:120K _inchange_semiconductor

2SC2606
2SC2606

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2615 DESCRIPTION Ў¤ With TO-247 package Ў¤ High voltage,high speed APPLICATIONS Ў¤ For high voltage,high speed and high power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-247) and symbol DESCRIPTION Ў¤ Absolute maximum r

5.81. 2sc2688.pdf Size:121K _inchange_semiconductor

2SC2606
2SC2606

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2688 DESCRIPTION Ў¤ With TO-126 package Ў¤ High breakdown voltage Ў¤ High transition frequency APPLICATIONS Ў¤ Designed for use in Color TV chroma output circuits. PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO VCEO

5.82. 2sc2626.pdf Size:149K _inchange_semiconductor

2SC2606
2SC2606

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2626 DESCRIPTION Ў¤ With TO-3PN package Ў¤ High voltage,high speed switching Ў¤ High reliability APPLICATIONS Ў¤ Switching regulators Ў¤ Ultrasonic generators Ў¤ High frequency inverters Ў¤ General purpose power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESC

5.83. 2sc2650.pdf Size:254K _inchange_semiconductor

2SC2606
2SC2606

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2650 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·Wide Area of Safe Operation APPLICATIONS ·Switching regulator applicaition. ·High voltage switching application. ·High speed DC-DC converter application. ABSOLUTE MAXIMUM RATINGS(Ta=25?

5.84. 2sc2690 2sc2690a.pdf Size:151K _inchange_semiconductor

2SC2606
2SC2606

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC2690 2SC2690A DESCRIPTION Ў¤ With TO-126 package Ў¤ Complement to type 2SA1220/1220A APPLICATIONS Ў¤ For use in audio and radio frequency power amplifiers PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Ў¤ Absolute maximum ratings(Ta=25Ўж ) SYMBOL VCBO

5.85. 2sc2655 to-92mod.pdf Size:276K _lge

2SC2606
2SC2606

2SC2655 TO-92MOD Transistor (NPN) 1.EMITTER TO-92MOD 1 2 2.COLLECTOR 3 3.BASE Features 5.800 Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 6.200 High speed switching time: tstg=1?s(Typ.) Complementary to 2SA1020 8.400 8.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.900 1.100 Symbol Parameter Symbol Units 0.400 0.600 VCBO Collector-Base Voltage 50 V

5.86. 2sc2655 to-92l.pdf Size:251K _lge

2SC2606
2SC2606

2SC2655 TO-92L Transistor (NPN) TO-92L 1.EMITTER 2.COLLECTOR 3.BASE 4.700 2 3 5.100 1 Features Low saturation voltage: VCE(sat)=0.5V(Max)(IC=1A) 7.800 High speed switching time: tstg=1?s(Typ.) 8.200 Complementary to 2SA1020 0.600 0.800 MAXIMUM RATINGS (TA=25? unless otherwise noted) 0.350 Symbol Parameter Symbol Units 0.550 13.800 VCBO Collector-Base Voltage

5.87. 2sc2668.pdf Size:203K _lge

2SC2606
2SC2606

2SC2668 TO-92S Transistor (NPN) 1. EMITTER TO-92S 2. COLLECTOR 1 2 3 3. BASE Features Small reverse transfer capacitance Low Noise Figure MAXIMUM RATINGS (TA=25? unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 4 V Dimensions in inches and (millimeters) IC Collect

5.88. 2sc2688.pdf Size:230K _lge

2SC2606
2SC2606

2SC2688(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECOTR 3. BASE 3 2 1 Features Color TV chroma out pupt circuits 2.500 7.400 2.900 1.100 7.800 1.500 3.900 3.000 4.100 3.200 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25? unless otherwise noted) 10.600 0.000 11.000 0.300 Symbol Parameter Value Units 2.100 VCBO 300 V Collector-Emitter Volt

5.89. 2sc2655.pdf Size:277K _wietron

2SC2606
2SC2606

2SC2655 NPN General Purpose Transistors P b Lead(Pb)-Free 1 2 3 1.EMITTER 3.BASE 2.COLLECTOR TO-92MOD ELECTRICAL CHARACTERISTICS(Tamb=25? unless otherwise specified) Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO V Ic=100?A,IE=0 50 Collector-emitter breakdown voltage V(BR)CEO V Ic=10mA,IB=0 50 Emitter-base breakdown voltage V(BR)EBO

5.90. 2sc2620.pdf Size:337K _kexin

2SC2606

SMD Type Transistors NPN Transistors 2SC2620 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=20mA 1 2 ● Collector Emitter Voltage VCEO=20V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect

5.91. 2sc2618.pdf Size:331K _kexin

2SC2606

SMD Type Transistors NPN Transistors 2SC2618 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● Collector Current Capability IC=500mA ● Collector Emitter Voltage VCEO=35V 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● Complementary to 2SA1121 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collecto

5.92. 2sc2619.pdf Size:346K _kexin

2SC2606

SMD Type Transistors NPN Transistors 2SC2619 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● Collector Current Capability IC=100mA 1 2 ● Collector Emitter Voltage VCEO=30V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collec

Datasheet: 2SC26 , 2SC260 , 2SC2600 , 2SC2601 , 2SC2602 , 2SC2603 , 2SC2604 , 2SC2605 , 9014 , 2SC2607 , 2SC2608 , 2SC2609 , 2SC261 , 2SC2610 , 2SC2611 , 2SC2612 , 2SC2613 .

 


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