2SC262 Specs and Replacement

Type Designator: 2SC262

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 1.6 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1 A

Max. Operating Junction Temperature (Tj): 175 °C

Electrical Characteristics

Transition Frequency (ft): 140 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO8

 2SC262 Substitution

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2SC262 datasheet

 0.1. Size:101K  fuji

2sc2626.pdf pdf_icon

2SC262

Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com ... See More ⇒

 0.2. Size:24K  hitachi

2sc2620.pdf pdf_icon

2SC262

2SC2620 Silicon NPN Epitaxial Planar Application VHF amplifier, Local oscillator Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SC2620 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 30 V Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 4V Collector current IC 20 mA Collector power dissipation PC 100 mW J... See More ⇒

 0.3. Size:129K  mospec

2sc2625.pdf pdf_icon

2SC262

A A A ... See More ⇒

 0.4. Size:238K  nell

2sc2625b.pdf pdf_icon

2SC262

RoHS 2SC2625B RoHS SEMICONDUCTOR Nell High Power Products Silicon NPN triple diffusion planar transistor (High voltage switching transistor) 10A/400V/80W 15.6 0.4 4.8 0.2 9.6 2.0 0.1 3.2 0,1 TO-3P(B) 2 3 FEATURES +0.2 +0.2 0.65 1.05 -0.1 -0.1 High-speed switching High collector to base voltage VCBO 5.45 0.1 5.45 0.1 1.4 Satisfactory linearity of foward cur... See More ⇒

Detailed specifications: 2SC2615, 2SC2616, 2SC2617, 2SC2618, 2SC2619, 2SC2619A, 2SC2619B, 2SC2619C, 2SA1837, 2SC2620, 2SC2621, 2SC2621C, 2SC2621D, 2SC2621E, 2SC2623, 2SC2624, 2SC2625

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