2SC2620 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2620
SMD Transistor Code: QB_QC
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 125 °C
Transition Frequency (ft): 500 MHz
Collector Capacitance (Cc): 0.9 pF
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO236
2SC2620 Transistor Equivalent Substitute - Cross-Reference Search
2SC2620 Datasheet (PDF)
2sc2620.pdf
2SC2620Silicon NPN Epitaxial PlanarApplicationVHF amplifier, Local oscillatorOutlineMPAK311. Emitter2. Base23. Collector2SC2620Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitter voltage VCEO 20 VEmitter to base voltage VEBO 4VCollector current IC 20 mACollector power dissipation PC 100 mWJ
2sc2620.pdf
SMD Type TransistorsNPN Transistors2SC2620SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=20mA1 2 Collector Emitter Voltage VCEO=20V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collect
2sc2626.pdf
Fuji Semiconductor, Inc. - P.O. Box 702708 - Dallas, TX 75370 - 972-733-1700 - www.fujisemiconductor.com
2sc2625b.pdf
RoHS 2SC2625B RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor(High voltage switching transistor)10A/400V/80W15.60.44.80.29.62.00.13.20,1TO-3P(B)23FEATURES+0.2+0.20.651.05-0.1-0.1 High-speed switching High collector to base voltage VCBO5.450.1 5.450.11.4 Satisfactory linearity of foward cur
2sc2621 3da2621.pdf
2SC2621(3DA2621) NPN /SILICON NPN TRANSISTOR : Purpose: Color TV chroma output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 300 V CBO V 300 V CEO V 6.5 V EBO I 200 mA C I 700 mA CP P (Ta=25) 1.2 W CP (Tc=25) 10 W CT 150
2sc2625t4tl.pdf
2SC2625T4TLSilicon NPN Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 V
2sc2625.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
2sc2624.pdf
isc Silicon NPN Power Transistor 2SC2624DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
2sc2625.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC2625DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXIMUM RATINGS(T =25
2sc2626.pdf
isc Silicon NPN Power Transistor 2SC2626DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 400V(Min)(BR)CEOHigh Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUltrasonic generatorsHigh frequency invertersGeneral purpose power amplifiersABSOLUTE MAXI
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
