2SC2630 Datasheet and Replacement
Type Designator: 2SC2630
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 100
W
Maximum Collector-Base Voltage |Vcb|: 35
V
Maximum Collector-Emitter Voltage |Vce|: 17
V
Maximum Emitter-Base Voltage |Veb|: 4
V
Maximum Collector Current |Ic max|: 14
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 175
MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: XM5
-
BJT ⓘ Cross-Reference Search
2SC2630 Datasheet (PDF)
8.4. Size:38K panasonic
2sc2631 e.pdf 
Transistor2SC2631Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11235.0 0.2 4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2
8.5. Size:59K panasonic
2sc2636 e.pdf
Transistor2SC2636Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0FeaturesR0.9High transition frequency fT.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.85Absolute Maximum Ratings (Ta=25C) 0.55 0.1 0.45 0.05Paramete
8.6. Size:42K panasonic
2sc2634 e.pdf
Transistor2SC2634Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA11275.0 0.2 4.0 0.2FeaturesLow noise voltage NV.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.11.27 1.27Collector to
8.7. Size:38K panasonic
2sc2634.pdf
Transistor2SC2634Silicon NPN epitaxial planer typeFor low-frequency and low-noise amplificationUnit: mmComplementary to 2SA11275.0 0.2 4.0 0.2FeaturesLow noise voltage NV.High foward current transfer ratio hFE.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2 +0.2Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.11.27 1.27Collector to
8.8. Size:34K panasonic
2sc2631.pdf
Transistor2SC2631Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11235.0 0.2 4.0 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit+0.2
8.9. Size:34K panasonic
2sc2632.pdf
Transistor2SC2632Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11245.9 0.2 4.9 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Sy
8.10. Size:38K panasonic
2sc2632 e.pdf
Transistor2SC2632Silicon NPN epitaxial planer typeFor low-frequency high breakdown voltage amplificationUnit: mmComplementary to 2SA11245.9 0.2 4.9 0.2FeaturesSatisfactory linearity of forward current transfer ratio hFE.High collector to emitter voltage VCEO.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Sy
Datasheet: 2SC2623
, 2SC2624
, 2SC2625
, 2SC2626
, 2SC2627
, 2SC2628
, 2SC2629
, 2SC263
, TIP127
, 2SC2631
, 2SC2632
, 2SC2633
, 2SC2634
, 2SC2635
, 2SC2636
, 2SC2637
, 2SC2638
.
History: MA0461
| 2SD626
| MRF835
| 2SD628H
| 2SC2759
| 2SB1119R
| RN2910
Keywords - 2SC2630 transistor datasheet
2SC2630 cross reference
2SC2630 equivalent finder
2SC2630 lookup
2SC2630 substitution
2SC2630 replacement
