2SC2635 Specs and Replacement
Type Designator: 2SC2635
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.75 W
Maximum Collector-Base Voltage |Vcb|: 650 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 35
Noise Figure, dB: -
Package: TO39
- BJT ⓘ Cross-Reference Search
2SC2635 datasheet
8.4. Size:38K panasonic
2sc2631 e.pdf 
Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1123 5.0 0.2 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 ... See More ⇒
8.5. Size:59K panasonic
2sc2636 e.pdf
Transistor 2SC2636 Silicon NPN epitaxial planer type For high-frequency amplification/oscillation Unit mm 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 Absolute Maximum Ratings (Ta=25 C) 0.55 0.1 0.45 0.05 Paramete... See More ⇒
8.6. Size:42K panasonic
2sc2634 e.pdf
Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1127 5.0 0.2 4.0 0.2 Features Low noise voltage NV. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector to... See More ⇒
8.7. Size:38K panasonic
2sc2634.pdf
Transistor 2SC2634 Silicon NPN epitaxial planer type For low-frequency and low-noise amplification Unit mm Complementary to 2SA1127 5.0 0.2 4.0 0.2 Features Low noise voltage NV. High foward current transfer ratio hFE. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 Collector to base voltage VCBO 60 V 0.45 0.1 0.45 0.1 1.27 1.27 Collector to... See More ⇒
8.8. Size:34K panasonic
2sc2631.pdf
Transistor 2SC2631 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1123 5.0 0.2 4.0 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 ... See More ⇒
8.9. Size:34K panasonic
2sc2632.pdf
Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1124 5.9 0.2 4.9 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Sy... See More ⇒
8.10. Size:38K panasonic
2sc2632 e.pdf
Transistor 2SC2632 Silicon NPN epitaxial planer type For low-frequency high breakdown voltage amplification Unit mm Complementary to 2SA1124 5.9 0.2 4.9 0.2 Features Satisfactory linearity of forward current transfer ratio hFE. High collector to emitter voltage VCEO. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Sy... See More ⇒
Detailed specifications: 2SC2628, 2SC2629, 2SC263, 2SC2630, 2SC2631, 2SC2632, 2SC2633, 2SC2634, S9013, 2SC2636, 2SC2637, 2SC2638, 2SC2639, 2SC264, 2SC2640, 2SC2641, 2SC2642
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