2SC2640 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SC2640
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 70 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 17 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 175 MHz
Collector Capacitance (Cc): 160 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: XM24
2SC2640 Transistor Equivalent Substitute - Cross-Reference Search
2SC2640 Datasheet (PDF)
2sc2644.pdf
2SC2644 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2644 VHF~UHF Band Wideband Amplifier Applications Unit: mm High gain Low IMD fT = 4 GHz (typ.) Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 25 VCollector-emitter voltage VCEO 12 VEmitter-base voltage VEBO 3.0 VCollector current IC 120 mA
2sc2647.pdf
Transistor2SC2647Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolute Ma
2sc2647 e.pdf
Transistor2SC2647Silicon NPN epitaxial planer typeFor high-frequency amplificationUnit: mm6.9 0.1 2.5 0.11.51.5 R0.9 1.0R0.9FeaturesOptimum for RF amplification, oscillation, mixing, and IF of FM/AM radios.M type package allowing easy automatic and manual insertion aswell as stand-alone fixing to the printed circuit board.0.850.55 0.1 0.45 0.05Absolute Ma
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
